Degradation of hot carrier lifetime for narrow width MOSFET with shallow trench isolation

Lee, W.; Lee, S.; Ahn, Tae Jun; Hwang, Hyunsang

doi:10.1109/relphy.1999.761623

Cited by 7 publications

(3 citation statements)

References 3 publications

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“…Consequently, the value of Δw is about −0.05 μm, and 2G p is around 0.0179 S. However, the value of Δw is not normally positive [1] but extraordinarily negative, which is attributed to the STI technology. A V TH rollup in a narrow-width device was reported in the LOCOS technology [6], whereas a V TH rolloff [7], [8] is observed in the STI technology. Hence, the drain current is enhanced by Δw in the STI technology but deteriorates in the LOCOS technology, while the negative value of Δw indicates the electrical characteristics that are extractive and not the actual decreased value in the width.…”

Section: Resultsmentioning

confidence: 97%

Effective Edge Width for 65-nm pMOSFETs and Their Variations Under CHC Stress

Wang

Hsieh

Liao

et al. 2011

IEEE Electron Device Lett.

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The narrow-width W effect of metal-oxidesemiconductor field-effect transistors (MOSFETs) with shallow trench isolation technology has been widely reported. The factor of most concern is the edge width Δw affecting the electrical characteristics of the MOSFETs. In this letter, the negative variation value of Δw, as explained in the content, was derived from 65-nm node p-channel MOSFETs (pMOSFETs). To verify the validity of Δw, the pMOSFETs were stressed by channel-hot-carrier stress conditions. According to the experimental results, the device parameter degradation, i.e., the threshold voltage V TH , was obviously dominated by |Δw|/W, and the degradation of the narrow-width device was also increased for the wide width.Index Terms-Channel hot carrier (CHC), metal-oxidesemiconductor field-effect transistors (MOSFETs), narrow-width effect, shallow trench isolation (STI).

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Section: Resultsmentioning

confidence: 97%

Effective Edge Width for 65-nm pMOSFETs and Their Variations Under CHC Stress

Wang

Hsieh

Liao

et al. 2011

IEEE Electron Device Lett.

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“…Previous reports (on bulk technologies) have shown that narrow-channel NMOSFETs with shallow trench isolation (STI) exhibit worse hot-carrier degradation as compared to wide ones. This was attributed to mechanical stress near the isolation edge, causing higher degradation rate at the adjacent channel region [23]. STI induced mechanical stress is indeed an important component of narrow-width effects, which may degrade the drive current capability of narrow channel devices through reduction of carrier mobility along the channel edges [24].…”

Section: Channel Width Dependence Of Hcementioning

confidence: 99%

Some issues of hot-carrier degradation and negative bias temperature instability of advanced SOI CMOS transistors

Ioannou

2007

Solid-State Electronics

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“…This carbon implant effect significantly reduces the thick n-MOS Vth mismatch in the 0.11-µm technology when it is used in the thick n-MOS Vth adjustment implant step. However, carbon induces an extremely abrupt electric field in a lightly doped drain (LDD) junction resulting in hot carrier injection (HCI) lifetime degradation [8]. This paper explains the HCI degradation mechanism in detail and suggests the use of a nitrogen implant in the LDD step to improve the HCI lifetime.…”

Section: Introductionmentioning

confidence: 99%

Device Characteristics and Hot Carrier Lifetime Characteristics Shift Analysis by Carbon Implant used for V_thAdjustment

Mun¹,

Kang²,

Joung³

2013

Journal of information and communication convergence engineerin

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In this paper, a carbon implant is investigated in detail from the perspectives of performance advantages and side effects for the thick n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET). Threshold voltage (Vth) adjustment using a carbon implant significantly improves the Vth mismatch performance in a thick (3.3-V) n-MOS transistor. It has been reported that a bad mismatch occurs particularly in the case of 0.11-μm Vth node technology. This paper investigates a carbon implant process as a promising candidate for the optimal Vth roll-off curve. The carbon implant makes the Vth roll-off curve perfectly flat, which is explained in detail. Further, the mechanism of hot carrier injection lifetime degradation by the carbon implant is investigated, and new process integration involving the addition of a nitrogen implant in the lightly doped drain process is offered as its solution. This paper presents the critical side effects, such as Isub increases and device performance shifts caused by the carbon implant and suggests an efficient method to avoid these issues.

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Degradation of hot carrier lifetime for narrow width MOSFET with shallow trench isolation

Cited by 7 publications

References 3 publications

Effective Edge Width for 65-nm pMOSFETs and Their Variations Under CHC Stress

Effective Edge Width for 65-nm pMOSFETs and Their Variations Under CHC Stress

Some issues of hot-carrier degradation and negative bias temperature instability of advanced SOI CMOS transistors

Device Characteristics and Hot Carrier Lifetime Characteristics Shift Analysis by Carbon Implant used for V_thAdjustment

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Degradation of hot carrier lifetime for narrow width MOSFET with shallow trench isolation

Cited by 7 publications

References 3 publications

Effective Edge Width for 65-nm pMOSFETs and Their Variations Under CHC Stress

Effective Edge Width for 65-nm pMOSFETs and Their Variations Under CHC Stress

Some issues of hot-carrier degradation and negative bias temperature instability of advanced SOI CMOS transistors

Device Characteristics and Hot Carrier Lifetime Characteristics Shift Analysis by Carbon Implant used for VthAdjustment

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Product

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Device Characteristics and Hot Carrier Lifetime Characteristics Shift Analysis by Carbon Implant used for V_thAdjustment