Degradation of Ka-Band GaN LNA Under High-Input Power Stress: Experimental and Theoretical Insights

Tong, Xiaodong; Wang, Rong; Zhang, Shiyong; Xu, Jianxing; Peng, Zheng; Chen, Fengxiang

doi:10.1109/ted.2019.2947311

Cited by 22 publications

(6 citation statements)

References 28 publications

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“…The two GaN-on-Si MMICs described here are compared in table 2 to other recently published GaN circuits operating at K-band. [4]. In truth, the latter reference is advantaged by its lower gain increasing the inputreferred 1 dB compression point (IP1dB).…”

Section: Benchmarking and Discussionmentioning

confidence: 99%

Ka-Band High-Linearity and Low-Noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications

et al. 2023

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Gallium Nitride is becoming an interesting solution for low-noise applications in the lower part of the millimetre-wave spectrum and is gaining increasing attention in the space community for microwave receiver functionalities. Lately, its maturity level has increased and its performance in terms of noise figure and operating frequency is reaching other advanced III-V technologies such as Gallium Arsenide and Indium Phoshpide. Moreover, Gallium Nitride features higher power handling capability in comparison to the previously mentioned III-V technologies. In this context, we have designed and characterized two demonstrator circuits of critical microwave receiver functionalities: a Low-Noise Amplifier and a Low-Distortion Amplifier operating at Ka-band. It is shown that GaN circuits compare well in terms of noise figure, gain, and operating frequency with respect to other advanced III-V technologies, and most of all exhibit superior linearity in terms of intermodulation distortion. The designed Low-Noise Amplifier exhibits state-of-the-art 1.2 dB Noise Figure in the 27-31 GHz bandwidth thanks to a profitable combination of 60-and 100-nm gate length transistors on the same MMIC. On the other hand, the Low-Distortion Amplifier features state-of-the-art +30 dBm Output Third Order Intercept point in the same operating bandwidth while requiring only 216 mW dc power. The presented electrical performances are validated by comparing these designs to others available in open literature through figures of merit that normalize trade-offs by transistor length (therefore a fair comparison) aiming to highlight the merits of the proposed design methodologies.

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Section: Benchmarking and Discussionmentioning

confidence: 99%

Ka-Band High-Linearity and Low-Noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications

et al. 2023

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“…The GaN high-electron-mobility transistors (HEMTs) are prepared with a self-developed ultra-thin barrier. The AlN/GaN/AlGaN double heterojunction epitaxy structure is grown on SiC substrate by metalorganic chemical vapor deposition (MOCVD) [8]. Due to the strong polarization effect of AlN, the energy band difference of AlN/GaN is large, so a high concentration of two-dimensional electron gas (2-DEG) can be formed at the interface of the two materials [9][10][11][12].…”

Section: A Gan Hemtmentioning

confidence: 99%

“…As the input power increases, the performance of the LNA decreases and the working time increases. Compared to the LNA based on InP and GaAs [8], the GaN LNA exhibits better reliability under high-power conditions. This is mainly due to the outstanding thermal conductivity of the SiC substrate and the excellent high-power nature of the GaN material.…”

Section: B Properties Of the Gan Lnamentioning

confidence: 99%

A Low-power, High-gain and Excellent Noise Figure GaN-on-SiC LNA Monolithic Microwave Integrated Circuit (MMIC) operating at Ka-band for 5G/6G Application

Dai,

Li,

Yan

et al. 2024

ACES Journal

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A 25-40 GHz monolithic low-noise amplifier (LNA) is designed and fabricated with the 100 nm gallium nitride on silicon carbide (GaN-on-SiC) technology. This four-stage-cascade monolithic LNA performs a low DC power consumption of 150 mW and noise figure of 1.6-2.2 dB. Moreover, the gain of 34-37 dB with the continuous wave of more than 2 W over 24 hours can be achieved covering the operating bandwidth. Hence, this state-of-art LNA possesses a great potential to be directly integrated with GaN power amplifiers and other microwave components to realize the high-integration, high-reliability, and high-power RF front-end.

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“…[45] During the processing of semiconductor devices, passivation of H is also frequently adopted to suppress the negative effect of intrinsic defects. [46,47] Therefore, we evaluate the effect of H passivation of the common n-type dopant (N), p-type dopant (Al), and intrinsic defects (V C and V Si ) on the performance of 4H-SiC. Because the growth conditions for both the single crystal growth and homoepitaxy of 4H-SiC are Si-rich, and the growth condition does not significantly affect the formation energies of H in 4H-SiC [Fig.…”

Section: Configurationsmentioning

confidence: 99%

Assessing the effect of hydrogen on the electronic properties of 4H-SiC

Huang¹,

Wang²,

Zhang³

et al. 2022

Chinese Phys. B

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As a common impurity in 4H-silicon carbide (4H-SiC), hydrogen (H) may play a role in the tuning of the electronic properties of 4H-SiC. In this work, we systemically explore the effect of H on the electronic properties of both n-type and p-type 4H-SiC. The passivation of H for intrinsic defects such as carbon vacancies (VC) and silicon vacancies (VSi) in 4H-SiC is also evaluated. We find that interstitial H at the bonding center of the Si-C bond (Hi bc) and interstitial H at the tetrahedral center of Si (Hi Si-te) dominate the defect configurations of H in p-type and n-type 4H-SiC, respectively. For n-type 4H-SiC, the compensation of Hi Si-te is found to pin the Fermi energy and hinder the increase of electron concentration for highly N-doped 4H-SiC. The compensation of Hi bc is negligible compared to that of VC on the p-type doping of Al-doped 4H-SiC. We have further examined whether H can passivate VC and improve carrier lifetime in 4H-SiC. It turns out that nonequilibrium passivation of VC by H is effective to eliminate the defect states of VC, which enhances the carrier lifetime of moderately doped 4H-SiC. Regarding the quantum-qubit applications of 4H-SiC, we find that H can readily passivate VSi during the creation of VSi centers. Thermal annealing is needed to decompose the resulting VSi-nH (n=1~4) complexes and promote the uniformity of the photoluminescence of VSi arrays in 4H-SiC. The current work may inspire the further development of the impurity engineering of H in 4H-SiC.

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Degradation of Ka-Band GaN LNA Under High-Input Power Stress: Experimental and Theoretical Insights

Cited by 22 publications

References 28 publications

Ka-Band High-Linearity and Low-Noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications

Ka-Band High-Linearity and Low-Noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications

A Low-power, High-gain and Excellent Noise Figure GaN-on-SiC LNA Monolithic Microwave Integrated Circuit (MMIC) operating at Ka-band for 5G/6G Application

Assessing the effect of hydrogen on the electronic properties of 4H-SiC

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