“…The light-induced degradation of the top-cell was simulated by varying the dangling-bond density from 1 Â 10 22 m À 3 to 10 Â 10 22 m À 3 . For further details on the simulations in the context of the Power-Matching-Method see [22]. The parameters for mc-Si:H, deposited at our institute, were determined in [20].…”