Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons

Zabavichev, I. Yu.; Потехин, А. А.; Puzanov, A. S.; Obolenskiy, S. V.; Козлов, В. А.

doi:10.1134/s106378261711029x

Semiconductors

2017

DOI: 10.1134/s106378261711029x

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Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons

I. Yu. Zabavichev

А. А. Потехин

A. S. Puzanov

et al.

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Cited by 2 publications

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Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons

Cited by 2 publications

References 10 publications

Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure

Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure

Impact of the Potential of Scattering at Radiation-Induced Defects on Carrier Transport in GaAs Structures

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