Delta doped tunnel diode: a new negative differential resistance device

Gilman, J. M. A.; O’Neill, Anthony

doi:10.1049/el:19900395

Cited by 5 publications

(1 citation statement)

References 3 publications

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“…The δ-doped structures are usually characterized by a rather high carrier density, which makes them unique among the other two-dimensional (2D) systems. Specific properties of the δ-doped systems make them interesting for both fundamental point of view and application in design and fabrication of electronic devices such as HEMTs [2], δ-FETs [3,4], tunneling diodes [5,6].…”

Section: Introductionmentioning

confidence: 99%

Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures

et al. 2011

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We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.

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Section: Introductionmentioning

confidence: 99%

Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures

et al. 2011

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Interband tunnel current between states of one, two, and three dimensions

Gilman

O’Neill

1992

Journal of Applied Physics

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The theory for interband tunnelling has been reviewed and modified to describe more effectively bipolar tunnel currents between states of either one, two or three dimensions. In particular a joint density of states is introduced for those cases where the densities of states on either side of the barrier are so widely disparate that the smaller of the two may lead to current limitation. Theory is compared with experiment which appears to vindicate the procedure.

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Tunneling between a two-dimensional electron gas and a two-dimensional hole gas

Jorke¹

1992

Journal of Applied Physics

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Using tunneling probabilities from two-band model calculations, interband tunneling from a two-dimensional electron gas to a two-dimensional hole gas is examined. The tunneling current is found, both in the direct and in the indirect case, to decrease inversely with the lifetime τr of states occupied in the two-dimensional hole gas by tunneling. As with increasing temperature τr commonly decreases, the temperature dependence of interband tunneling between two-dimensional carrier gases is expected to be more pronounced than that between three-dimensional carrier gases. By use of a self-consistent approach, tunneling currents are calculated for the δn-δp doping structure in (100) silicon.

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Delta doped tunnel diode: a new negative differential resistance device

Cited by 5 publications

References 3 publications

Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures

Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures

Interband tunnel current between states of one, two, and three dimensions

Tunneling between a two-dimensional electron gas and a two-dimensional hole gas

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