Interband tunnel current between states of one, two, and three dimensions

Gilman, J. M. A.; O’Neill, Anthony

doi:10.1063/1.351047

Journal of Applied Physics

1992

DOI: 10.1063/1.351047

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Interband tunnel current between states of one, two, and three dimensions

J. M. A. Gilman

Anthony O’Neill

Abstract: The theory for interband tunnelling has been reviewed and modified to describe more effectively bipolar tunnel currents between states of either one, two or three dimensions. In particular a joint density of states is introduced for those cases where the densities of states on either side of the barrier are so widely disparate that the smaller of the two may lead to current limitation. Theory is compared with experiment which appears to vindicate the procedure.

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Cited by 5 publications

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Hamiltonian and Boundary Conditions for Electrons in Semiconductor Heterostructures

Schnittler

Kirilov

1993

Physica Status Solidi (b)

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In using the equivalent Hamiltonian approach for the simulation of semiconductor heterostructures two aspects are discussed controversially in the present literature: firstly the form of the equivalent Hamiltonian and secondly the appropriate boundary conditions. In this paper both aspects are investigated in the framework of the envelope-function formalism especially for non-parabolic hand structures. Appropriate forms of the equivalent Hamiltonian and the boundary conditions are suggested and compared. The expected deviations are presented using theoretical calculations for type I and type I1 heterostructures. In accordance to theoretical evidence, the differences may be important in the case of type I1 heterostructures. From a theoretical point of view the use of the energy mass should be preferred. But for final evidence further experimental investigations and comparison with calculations based on different models are necessary. Bei der Anwendung der Methode des aquivalenten Hamiltonians zur Simulation von

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Hamiltonian and Boundary Conditions for Electrons in Semiconductor Heterostructures

Schnittler

Kirilov

1993

Physica Status Solidi (b)

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Tunneling between a two-dimensional electron gas and a two-dimensional hole gas

Jorke¹

1992

Journal of Applied Physics

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Using tunneling probabilities from two-band model calculations, interband tunneling from a two-dimensional electron gas to a two-dimensional hole gas is examined. The tunneling current is found, both in the direct and in the indirect case, to decrease inversely with the lifetime τr of states occupied in the two-dimensional hole gas by tunneling. As with increasing temperature τr commonly decreases, the temperature dependence of interband tunneling between two-dimensional carrier gases is expected to be more pronounced than that between three-dimensional carrier gases. By use of a self-consistent approach, tunneling currents are calculated for the δn-δp doping structure in (100) silicon.

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Device applications of interband tunneling structures with one, two, and three dimensions

Gilman

O’Neill

1993

Journal of Applied Physics

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A systematic study of interband tunneling between states of one, two, and three dimensions (1D, 2D, 3D) is presented based on the theory of the Esaki tunnel diode, modified to take interdimensional tunneling into account. I-V characteristics are given for each of the nine possible combinations. Three systems are dealt with in greater depth: 2D-3D tunneling, where a comparison with experimental data is made, 2D-2D tunneling, where improvements over the conventional tunnel diode characteristic are seen, and 2D-1D tunneling where the prospect of a tristable device is discussed.

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Interband tunnel current between states of one, two, and three dimensions

Cited by 5 publications

References 8 publications

Hamiltonian and Boundary Conditions for Electrons in Semiconductor Heterostructures

Hamiltonian and Boundary Conditions for Electrons in Semiconductor Heterostructures

Tunneling between a two-dimensional electron gas and a two-dimensional hole gas

Device applications of interband tunneling structures with one, two, and three dimensions

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