Device applications of interband tunneling structures with one, two, and three dimensions

Abstract

A systematic study of interband tunneling between states of one, two, and three dimensions (1D, 2D, 3D) is presented based on the theory of the Esaki tunnel diode, modified to take interdimensional tunneling into account. I-V characteristics are given for each of the nine possible combinations. Three systems are dealt with in greater depth: 2D-3D tunneling, where a comparison with experimental data is made, 2D-2D tunneling, where improvements over the conventional tunnel diode characteristic are seen, and 2D-1D tunneling where the prospect of a tristable device is discussed.

Observation of low-dimensional state tunneling in nanocrystalline silicon∕crystalline silicon heterostructures

“…This kind of 3D-2D tunneling current discontinuity is a common effect in NDC devices. 23 In Fig. 2(b), we have presented the theoretical results at 10 K for the 2D-0D tunneling current with FES (dashed curve) and the 3D-2D tunneling current, taking into account the space charge limit effects 13 (see the dotted curve).…”

Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions

“…Fig. 4 shows minimum sub-band separation energy in Γ-band, when a 2D quantum well structure is assumed [7,8]. The results of energy differences in NDR positions (V NDR1 -V peak and V NDR3 -V NDR1 ) were also plotted.…”

Tunneling mechanism of GaAs ultrashallow sidewall tunnel junction

“…According to Ref. [10], steps appear in the NDR region when the structure is quantum confined. The GaAs layers in these tunnel junctions are 50 nm in thickness, so the step formed by the 2D confinement is expected.…”