Demonstration of 4H-SiC UV single photon counting avalanche photodiode

Xin, Xiaobin; Yan, Feng; Alexandrove, P.; Sun, Xiaoli; Stahle, C. M.; Hu, Jun; Matsumura, M.; Li, X.; Weiner, M.; Zhao, Hongzhi

doi:10.1049/el:20057320

Cited by 57 publications

(25 citation statements)

References 5 publications

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“…SiC-based APDs have been demonstrated with high quantum efficiencies in the solar-blind wavelength range, and have been shown to have high gain and low dark currents [8]- [12] . Recently reported devices with dark current densities of 63 nA/cm 2 demonstrated a gain of more than 10,000 and also showed a very low noise equivalent power of 20 fW [13] .…”

Section: Solar-blind Geiger-mode Avalanche Photodiode Detector Arraysmentioning

confidence: 99%

Deep UV photon-counting detectors and applications

Shaw

Siegel

Model

et al. 2009

Advanced Photon Counting Techniques III

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Photon counting detectors are used in many diverse applications and are well-suited to situations in which a weak signal is present in a relatively benign background. Examples of successful system applications of photon-counting detectors include ladar, bio-aerosol detection, communication, and low-light imaging. A variety of practical photon-counting detectors have been developed employing materials and technologies that cover the waveband from deep ultraviolet (UV) to the near-infrared. However, until recently, photoemissive detectors (photomultiplier tubes (PMTs) and their variants) were the only viable technology for photon-counting in the deep UV region of the spectrum. While PMTs exhibit extremely low dark count rates and large active area, they have other characteristics which make them unsuitable for certain applications. The characteristics and performance limitations of PMTs that prevent their use in some applications include bandwidth limitations, high bias voltages, sensitivity to magnetic fields, low quantum efficiency, large volume and high cost.Recently, DARPA has initiated a program called Deep UV Avalanche Photodiode (DUVAP) to develop semiconductor alternatives to PMTs for use in the deep UV. The higher quantum efficiency of Geiger-mode avalanche photodiode (GM-APD) detectors and the ability to fabricate arrays of individually-addressable detectors will open up new applications in the deep UV. In this paper, we discuss the system design trades that must be considered in order to successfully replace low-dark count, large-area PMTs with high-dark count, small-area GM-APD detectors. We also discuss applications that will be enabled by the successful development of deep UV GM-APD arrays, and we present preliminary performance data for recently fabricated silicon carbide GM-APD arrays.

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Section: Solar-blind Geiger-mode Avalanche Photodiode Detector Arraysmentioning

confidence: 99%

Deep UV photon-counting detectors and applications

Shaw

Siegel

Model

et al. 2009

Advanced Photon Counting Techniques III

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“…Ultraviolet-enhanced Si photodetectors may be used in UV detection systems, but they have higher dark currents (nA) 16 . Wide-bandgap semiconductor p-i-n photodiodes with high avalanche gain and low dark current have been reported that employ SiC epitaxial layers grown on SiC substrates 17,18 . These devices are potentially not as attractive as GaN APDs for biodetection applications because SiC is an indirect gap semiconductor for which the quantum efficiency is optimized at shorter wavelengths (< 300 nm) than that of the bioflourescence of interest.…”

Section: High Gain Gan Avalanche Photodiodes On Gan Substratesmentioning

confidence: 99%

Device challenges for biodetection

et al. 2006

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Optical characterization of nitride semiconductors and device testing of ultraviolet emitters and detectors comprised of these materials are employed in addressing the challenges faced in developing semiconductor-based, compact, lowcost, low-power-consumption biodetection systems. Comparison of time-resolved photoluminescence (TRPL) on UV LED wafers prior to fabrication with subsequent device testing indicate that the best performance is attained from active regions that exhibit both reduced nonradiative recombination due to saturation of traps associated with point and extended defects and concomitant lowering of radiative lifetime with increasing carrier density. Temperature and intensity dependent TRPL measurements on a new material, AlGaN containing nanoscale compositional inhomogeneities (NCI), show that it inherently combines inhibition of nonradiative recombination with reduction of radiative lifetime, providing a potentially higher efficiency UV emitter active region. In addition, testing of GaN avalanche photodiodes (APDs) on low defect density bulk GaN substrates indicates that for the first time GaN APDs with diameters as large as 50 microns exhibit reproducible gain greater than 1000. These results show promise for replacement of photomultipliers in biodetection systems.

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“…Small-size SiC avalanche photodiodes have been previously demonstrated with a high single photon detection efficiency [3][4][5][6] and high solar photon rejection ratio [7]. In this work we present results of the integration of avalanche photodiode arrays and photomultipliers with thin film stack optical filters.…”

Section: Introductionmentioning

confidence: 96%

Silicon carbide photomultipliers and avalanche photodiode arrays for ultraviolet and solar-blind light detection

et al. 2009

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Silicon carbide is known for its large bandgap and suitability to make highly sensitive ultraviolet photo-detectors. These devices show appreciable quantum efficiencies in the 240 nm -350 nm wavelength range in combination with low dark currents. We present recent results on 4H-SiC avalanche photodiode arrays and SiC-based solid-state photomultiplier arrays suitable for ultraviolet and solar-blind light detection. A novel SiC-based photomultiplier array was demonstrated. Additional solar-blind optical filter allowed achieving a solar photon rejection ratio of more than 10 6 in combination with 40% quantum efficiency at 280 nm. More than 50% of pixels of the array have demonstrated low dark count rates in the range of several kHz and single photon detection efficiencies of more than 30% at 266 nm in the solar-blind wavelengths range. The photomultiplier array operating in Geiger mode has demonstrated a linearly increasing response with an increase in number of incident photons. We report on the electrical and optical characteristics of solar-blind 4H-SiC avalanche photodiode arrays and photomultipliers.

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Demonstration of 4H-SiC UV single photon counting avalanche photodiode

Abstract: The first 4H-SiC UV single photon counting avalanche photodiode has been designed, fabricated and characterised. Spectral quantum efficiency from 250 to 370 nm is presented. Single photon counting at room temperature is demonstrated for the first time and counting efficiency is reported.

Cited by 57 publications

References 5 publications

Deep UV photon-counting detectors and applications

Deep UV photon-counting detectors and applications

Device challenges for biodetection

Silicon carbide photomultipliers and avalanche photodiode arrays for ultraviolet and solar-blind light detection

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