High performance AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor was fabricated using HfO2 as the surface passivation and gate insulator. The gate and drain leakage currents are drastically reduced to tens of nanoamperes before breakdown. Without field plates, for 10 μm of gate-drain spacing, the off-state breakdown voltage is 1035 V with a specific on resistance of 0.9 mΩ cm2. In addition, there is no current slump observed from the pulse measurements. This is the best performance reported on GaN-based power-switching devices on sapphire up to now, which efficiently combines excellent device forward, reverse, and switching characteristics.

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Ni/4H-SiC Schottky photodiodes of 5 mm x 5 mm area have been fabricated and characterized. The photodiodes show less than 0.1 pA dark current at -4 V and an ideality factor of 1.06. A quantum efficiency (QE) between 3 and 400 nm has been calibrated and compared with Si photodiodes optimized for extreme ultraviolet (EUV) detection. In the EUV region, the QE of SiC detectors increases from 0.14 electrons/photon at 120 nm to 30 electrons/photon at 3 nm. The mean energy of electron-hole pair generation of 4H-SiC estimated from the spectral QE is found to be 7.9 eV.

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The first 4H-SiC UV single photon counting avalanche photodiode has been designed, fabricated and characterised. Spectral quantum efficiency from 250 to 370 nm is presented. Single photon counting at room temperature is demonstrated for the first time and counting efficiency is reported.