Demonstration of 640×512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array

Gunapala, Sarath D.; Bandara, S. V.; Hill, Cory J.; Ting, David Z.; Liu, J.K.; Rafol, Sir B.; Blazejewski, E. R.; Mumolo, Jason M.; Keo, Sam A.; Krishna, S.; Chang, Yia‐Chung; Shott, C. A.

doi:10.1016/j.infrared.2006.10.004

Cited by 38 publications

(11 citation statements)

References 17 publications

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“…FPAs as large as 640 × 512 pixels were fabricated for MWIR applications at LN 2 temperatures. This device has a D * as high as 1 × 10 10 cmHz 1/2 /W and an NETD of 40 mK [264]. …”

Section: Quantum Dots-in-a-well Photodetectors (Dwell-ips)mentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

230

110

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The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

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“…FPAs as large as 640 × 512 pixels were fabricated for MWIR applications at LN 2 temperatures. This device has a D * as high as 1 × 10 10 cmHz 1/2 /W and an NETD of 40 mK [264]. …”

Section: Quantum Dots-in-a-well Photodetectors (Dwell-ips)mentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

230

110

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“…The InSb content, the residual strain and net InAsSb composition derived from X-ray measurements are shown in Table 1. Both samples exhibit high quality X-ray diffraction patterns (not shown), indicative of high crystalline quality, similar to material used in our previously reported quantum dot and superlattice based imaging arrays [5]. Photoluminescence measurements were performed on the as-grown wafers using a Nicolet Nexus 870 Fourier transform infrared spectrometer operating in step-scan mode.…”

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confidence: 69%

Mid-infrared quantum dot barrier photodetectors with extended cutoff wavelengths

et al. 2010

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A method to extend the cutoff wavelength of mid-infrared barrier photodetectors by incorporating self-assembled InSb quantum dots into the active area of the detector is demonstrated. This approach enables the extension of the cutoff wavelength of barrier photodetectors from 4.2 to 6 mm, demonstrating infrared response at temperatures up to 225 K.Introduction: Recently, a new class of infrared (IR) detectors, the so-called nBn or XBn barrier photodetectors, has been proposed and demonstrated [1][2][3]. These detectors utilise a wide bandgap barrier layer sandwiched between the top contact and the absorber layers. The barrier blocks the flow of majority carriers (electrons), but not minority carriers. The barrier photodetector architecture offers advantages of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination process [4] and of planar processing. This simplifies fabrication in that it no longer requires etching through the absorption layer and obviates the need for post-etch passivation. However, the barrier photodetectors' implementation is currently limited by the available choice of barrier and absorber materials that must have the appropriate band alignment and be lattice-matched to a suitable substrate. So far, high-performance barrier photodetectors with an InAsSb/ AlAsSb absorber -barrier combination have been demonstrated with cutoff wavelengths limited to about l ¼ 4 mm [3]. Here, we demonstrate an approach to extend the wavelength of barrier photodetectors by incorporating nanostructures into the absorber of these devices. The barrier photodetectors with self-assembled quantum dots (QDs) integrated into InAs 0.91 Sb 0.09 exhibited cutoff wavelength exceeding l ¼ 6 mm and operated above T ¼ 225 K. This development expands the potential application areas of barrier photodetectors and enables a new class of devices with appealing physical properties.

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“…Lim et al (54) have announced a quantum efficiency of 35% for QDIPs with peak detection wavelength of approximately 4.1 mm. The highest measurable detectivities at 77 K for QDIPs found in the literature (105,214,231,232,(284)(285)(286) are shown in Figure 21.…”

Section: Epitaxial (Self-assembled) Qdipsmentioning

confidence: 84%

“…In Figure 24, some of the reported detectivities for colloidal QDIPs are compared to those found in epitaxial QDIPs and QWIPs. As can be seen, epitaxial QDIPs (37,42,45,52,67,68,72,105,106,214,216,217,219,220,231,(284)(285)(286) have D Ã values comparable to those of QWIPs (30, 296, 298-301, 305, 306), whereas colloidal QDIPs (103,104,174,185) operating in the NWIR show considerably higher detectivities. Table 2 summarizes the main advantages and disadvantages of using colloidal and epitaxial QDs for infrared detection.…”

Section: Comparison Of Colloidal and Epitaxial Qdipsmentioning

confidence: 96%

Colloidal and Epitaxial Quantum Dot Infrared Photodetectors: Growth, Performance, and Comparison

Kazemi

Zamiri

Kim

et al. 2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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In this review article, the current status of quantum dot infrared photodetectors (QDIPs) compared to competitive infrared (IR) technologies will be evaluated. Carrier generation and some of the other important physical properties of quantum dots (QDs) will be discussed. Recent design improvements of epitaxial and colloidal QDIPs are presented, followed by a thorough discussion on the growth techniques for both types of QDs. Important figures of merit for QDIPs, including dark current, responsivity, detectivity, and noise equivalent differential temperature (NEDT), will be explained, and a comparison will be made between QDIPs performance and other IR technologies in terms of their figures of merit.

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Demonstration of 640×512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array

Cited by 38 publications

References 17 publications

Progress in Infrared Photodetectors Since 2000

Progress in Infrared Photodetectors Since 2000

Mid-infrared quantum dot barrier photodetectors with extended cutoff wavelengths

Colloidal and Epitaxial Quantum Dot Infrared Photodetectors: Growth, Performance, and Comparison

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