Demonstration of a Depletion-Mode SrSnO<sub>3</sub> n-Channel MESFET

Chaganti, V. R. Saran Kumar; Prakash, Abhinav; Yue, Jin; Jalan, Bharat; Koester, Steven J.

doi:10.1109/led.2018.2861320

Cited by 31 publications

(18 citation statements)

References 37 publications

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“…Thus, BaSnO 3 –SrSnO 3 solid‐solutions ( E g = 3.1–4.1 eV) are good candidates to realize large bandgap (≈4 eV) TOS‐based TFTs. Very recently, a metal‐semiconductor TFT operating as depletion‐mode has been reported by Chaganti et al They used the La‐doped SrSnO 3 film as the channel layer. However, the TFT performance of undoped BaSnO 3 –SrSnO 3 solid‐solutions, which would be better to fabricate an accumulation‐mode TFT, has not been reported thus far probably due to the lack of fundamental knowledge especially the effective thickness ( t eff ) and the carrier effective mass ( m *), which are essential information to design the TFTs.…”

Section: Electron Transport Properties Of La‐doped (Sr05ba05)sno3 Fmentioning

confidence: 99%

Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO₃–SrSnO₃ Solid‐Solution Based Thin Film Transistors

Sanchela

Wei

Cho

et al. 2019

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shows rather high carrier mobility at room temperature (≈320 cm 2 V −1 s −1 ). [3,4] The crystal structure of BaSnO 3 is cubic perovskite type, ABO 3 with space group of Pm-3m (a = 0.4116 nm), and the A-site can be fully substituted with Sr (SrSnO 3 ), though the crystal structure is orthorhombic perovskite with space group of Pbnm (a = 0.57082 nm, b = 0.57035 nm, c = 0.80659 nm). [5] The bandgap of SrSnO 3 is ≈4.1 eV [2] and the La-doped SrSnO 3 films also show high carrier mobility (40-55 cm 2 V −1 s −1 [6,7] ) at room temperature. Thus, BaSnO 3 -SrSnO 3 solid-solutions (E g = 3.1-4.1 eV) [8] are good candidates to realize large bandgap (≈4 eV) TOS-based TFTs. Very recently, a metal-semiconductor TFT operating as depletion-mode has been reported by Chaganti et al. [9] They used the La-doped SrSnO 3 film as the channel layer. However, the TFT performance of undoped BaSnO 3 -SrSnO 3 solid-solutions, which would be better to fabricate an accumulation-mode TFT, has not been reported thus far probably due to the lack of fundamental knowledge especially the effective thickness (t eff ) and the carrier effective mass (m*), which are essential information to design the TFTs.Although several researchers have reported on the m* of SrSnO 3 , the reported m* values are scattered ranging from 0.14 to 4 m 0 . In 2007, Hadjarab et al. [10] measured the magnetic susceptibility of Sr 0.98 La 0.02 SnO 3−δ ceramic and extracted m* of 4 m 0 . Moreira et al. [11,12] and Liu et al. [13] performed the band structure calculation of SrSnO 3 and BaSnO 3 , and reported much lighter m* values; SrSnO 3 : m* = 0.14-0.23 m 0 , BaSnO 3 : 0.03-0.20 m 0 . Recently, Ong et al. [14] reported that the m* of SrSnO 3 is ≈0.4 m 0 , whereas the calculated effective mass of BaSnO 3 is m* = 0.26 m 0 with the same method. Generally, the m* of n-type TOS, in which the conduction band is composed of ns orbitals, strongly depends on the overlap integral of the neighboring ns orbitals. [15] Further, the overlap integral of ns orbitals would be insensitive to the bond angle. [16] If this assumption is correct, since the interatomic distances of neighboring Sn ions in SrSnO 3 and BaSnO 3 crystals are 0.4035 and 0.4116 nm, respectively, the m* of SrSnO 3 should be lighter than that of BaSnO 3 , which is in opposite relationship with the band calculation results. [11][12][13]

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Section: Electron Transport Properties Of La‐doped (Sr05ba05)sno3 Fmentioning

confidence: 99%

Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO₃–SrSnO₃ Solid‐Solution Based Thin Film Transistors

Sanchela

Wei

Cho

et al. 2019

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“…There are a few papers reporting SrSnO3-based TFTs. In 2018, Chaganti et al [19] reported a depletion-mode SrSnO3 n-channel metal-semiconductor FET (MESFET). In 2019, Thoutam et al [20] reported the ion gel gating of La-doped SrSnO3 films grown by MBE, where they successfully modulated the conductivity using the large capacitance of ion gel.…”

mentioning

confidence: 99%

Fabrication and Operating Mechanism of Deep‐UV Transparent Semiconducting SrSnO₃‐Based Thin Film Transistor

Wei

Gong

Liang

et al. 2020

Adv Elect Materials

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Thin film transistor (TFT) with deep-UV transparency is a promising component for the next generation optoelectronics such as biosensor. Among several deep-UV transparent oxide semiconductors, SrSnO3 is an excellent candidate material owing to its wide bandgap (~4.6 eV) and rather high carrier electron mobility. Here we show fabrication and operation mechanism of the SrSnO3-TFT. We fabricated metal-insulatorsemiconductor structure on the 28-nm-thick SrSnO3 film. The resultant TFT showed clear transistor characteristics; the on-to-off current ratio was ~10 2 , the threshold voltage was ~ −18 V, and the field effect mobility was ~14 cm 2 V −1 s −1 . The effective thickness of the electron channel gradually increased with gate voltage and saturated at ~5 nm, which was evaluated by the thermopower modulation. The present results would be helpful for utilizing deep-UV transparent TFTs for biosensing applications.

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“…19,23 Early device work using SSO as a channel material has yielded exciting results with the record-high peak transconductance value, 17 mS/mm in a depletion mode La-doped SSO (LSSO) n-channel metal-semiconductor field-effect transistor. 24 There remain, however, several open questions including the optimal choice of dopant site and ion, dopant solubility, activation energy and the relative importance of crystal structure, defects (ionized vs. neutral) and electron-phonon scattering on electronic transport. Density functional theory calculations suggest lower formation energy of compensating acceptor defects in LSSO than in La-doped BSO limiting the maximum achievable electron density to ~ 1 × 10 20 cm -3 (i.e.…”

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Dopant solubility and charge compensation in La-doped SrSnO3 films

Truttmann

Prakash

Yue

et al. 2019

Applied Physics Letters

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We investigate lanthanum (La) as an n-type dopant in the strain-stabilized tetragonal phase of SrSnO 3 grown on GdScO 3 (110) using a radical-based hybrid molecular beam epitaxy approach.Fully coherent, epitaxial films with atomically smooth film surface were obtained irrespective of doping density. By combining secondary ion mass spectroscopy and Hall measurements, we demonstrate that each La atom contributes to one electron to the film confirming it occupies Srsite in SrSnO 3 and that it is completely activated. Carrier density exceeding 1 × 10 20 cm -3 was achieved in LSSO films, which is in excellent agreement with the dopant-solubility limit predicted by the density functional theory calculations. A record-high room-temperature mobility of 70 cm 2 V -1 s -1 at 1 × 10 20 cm -3 was obtained in 12 nm La-doped SrSnO 3 film making this the thinnest perovskite oxide semiconductor with a reasonably high electron mobility at room temperature. We discuss the structure-dopant-transport property relationships providing essential knowledge for the design of electronic devices using these materials.

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Demonstration of a Depletion-Mode SrSnO₃ n-Channel MESFET

Cited by 31 publications

References 37 publications

Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO₃–SrSnO₃ Solid‐Solution Based Thin Film Transistors

Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO₃–SrSnO₃ Solid‐Solution Based Thin Film Transistors

Fabrication and Operating Mechanism of Deep‐UV Transparent Semiconducting SrSnO₃‐Based Thin Film Transistor

Dopant solubility and charge compensation in La-doped SrSnO3 films

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Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET

Cited by 31 publications

References 37 publications

Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO3–SrSnO3 Solid‐Solution Based Thin Film Transistors

Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO3–SrSnO3 Solid‐Solution Based Thin Film Transistors

Fabrication and Operating Mechanism of Deep‐UV Transparent Semiconducting SrSnO3‐Based Thin Film Transistor

Dopant solubility and charge compensation in La-doped SrSnO3 films

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Demonstration of a Depletion-Mode SrSnO₃ n-Channel MESFET

Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO₃–SrSnO₃ Solid‐Solution Based Thin Film Transistors

Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO₃–SrSnO₃ Solid‐Solution Based Thin Film Transistors

Fabrication and Operating Mechanism of Deep‐UV Transparent Semiconducting SrSnO₃‐Based Thin Film Transistor