A facile H O oxidation treatment to tune the properties of metal disulfides for oxygen evolution reaction (OER) activity enhancement is introduced. With this method, the degree of oxidation can be readily controlled and the effect of surface S residues in the resulted metal (oxy)hydroxides for the OER is revealed for the first time. The developed NiFe (oxy)hydroxide catalyst with residual S demonstrates an extraordinarily low OER overpotential of 190 mV at the current density of 10 mA cm after coupling with carbon nanotubes, and outstanding performance in Zn-air battery tests. Theoretical calculation suggests that the surface S residues can significantly reduce the adsorption free energy difference between O* and OH* intermediates on the Fe sites, which should account for the high OER activity of NiFe (oxy)hydroxide catalysts. This work provides significant insight regarding the effect of surface heteroatom residues in OER electrocatalysis and offers a new strategy to design high-performance and cost-efficient OER catalysts.

In this paper, a dual-band perfect absorber, composed of a periodically patterned elliptical nanodisk graphene structure and a metal ground plane spaced by a thin SiO(2) dielectric layer, is proposed and investigated. Numerical results reveal that the absorption spectrum of the graphene-based structure displays two perfect absorption peaks in the terahertz band, corresponding to the absorption value of 99% at 35μm and 97%at 59μm, respectively. And the resonance frequency of the absorber can be tunned by controlling the Fermi level of graphene layer. Further more, it is insensitive to the polarization and remains very high over a wide angular range of incidence around ±60(0). Compared with the previous graphene dual-band perfect absorption, our absorber only has one shape which can greatly simplify the manufacturing process.

Highly efficient OER electrocatalyst based on metal-rich amorphous Co–Fe phosphide was fabricatedviaa non-toxic solvothermal method.

We demonstrate low-operational-current W/Co 20 Fe 60 B 20 /MgO spin Hall nanooscillators (SHNOs) on highly resistive silicon (HiR-Si) substrates. Thanks to a record high spin Hall angle of the β-phase W (θ SH = -0.53), a very low threshold current density of 3.3 × 10 7 A/cm 2 can be achieved. Together with their very wide frequency tunability (7-28 GHz), promoted by a moderate perpendicular magnetic anisotropy, this makes HiR-Si/W/CoFeB based SHNOs potential candidates for wide-band microwave signal generation. Their CMOS compatibility offers a promising route towards the integration of spintronic microwave devices with other on-chip semiconductor microwave components.