Demonstration of aluminum doped ZnO as anti-reflection coating

Eghfeli, Muhaira Al; Hadi, Sabina Abdul; El‐Atab, Nazek; Nayfeh, Ammar

doi:10.1109/pvsc.2016.7750155

Cited by 3 publications

(1 citation statement)

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“…AZO has specific benefits over the commonly used transparent electrode of indium tin oxide (ITO), such as a composition made of abundant materials, controllable doping level and bandgap engineering possibilities that make it, in principle more flexible in device applications. AZO has been shown as efficient transparent electrodes in Si [152], perovskite [153] and polymer [154] solar cells, as well as organic [155] and inorganic [156] LEDs, and as an antireflection coating for photovoltaic cells [157], also when not doped with Al [158] (see Figure 9).…”

Section: Thin Filmsmentioning

confidence: 99%

ZnO as a Functional Material, a Review

2019

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Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many properties that make it widely studied in the material science, physics, chemistry, biochemistry, and solid-state electronics communities. Its transparency, possibility of bandgap engineering, the possibility to dope it into high electron concentrations, or with many transition or rare earth metals, as well as the many structures it can form, all explain the intensive interest and broad applications. This review aims to showcase ZnO as a very versatile material lending itself both to bottom-up and top-down fabrication, with a focus on the many devices it enables, based on epitaxial structures, thin films, thick films, and nanostructures, but also with a significant number of unresolved issues, such as the challenge of efficient p-type doping. The aim of this article is to provide a wide-ranging cross-section of the current state of ZnO structures and technologies, with the main development directions underlined, serving as an introduction, a reference, and an inspiration for future research.

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