Demonstration of Error-Free 32-Gb/s Operation From Monolithic CMOS Nanophotonic Transmitters

Gill, Douglas M.; Xiong, Chi; Proesel, Jonathan E.; Rosenberg, J.J.; Orcutt, Jason S.; Khater, Marwan; Ellis-Monaghan, John; Stricker, Andy; Kiewra, E.; Martin, Yves; Vlasov, Yurii A.; Haensch, Wilfried; Green, William M. J.

doi:10.1109/lpt.2016.2545525

Cited by 27 publications

(21 citation statements)

References 18 publications

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“…Si photonics transmitters are mainly based on MZI modulators [124]. Depending on the ratio between the bit time, T BIT (the time duration of a single bit), and the transit time of the optical wave through the modulator, T T , modulators can be classified as lumped [70,77,93,94,105] or travelling wave [96][97][98][99]125]. T BIT is the reciprocal of the bit rate, defined as the number of bits per second.…”

Section: Graphene Integration On Sinmentioning

confidence: 99%

“…State-of-the-art integrated modulators used in optical links are InP-based electro-absorption modulators [295][296][297], mainly for short-distance communications (up to ~80 km), Si-based photonic Mach-Zehnder interferometer (MZI) modulators [125] in pluggable modules (QSFP28) for <10 km-link-length interconnections (100GE CLR4, 100GE LR4 or 100GE ER4) or LiNbO 3 -based MZ is for links >100 km. The parameters indicating modulator performance are energy consumption (pJ per bit), electrical bandwidth, insertion loss (IL) and extinction ratio (ER).…”

Section: Appendix 2 | Modulators and Detectors For Optical Transceiversmentioning

confidence: 99%

“…[111]), P in = P out,1 + IL = −1.1 dBm. If a MZI with FOM PM = 12 v dB is used [125], P in can be found if the modulator peak-to-peak driving voltage, V PP , is specified. If we assume V PP = 1 V, to be compatible with complementary metal oxide semiconductor (CMOs) technology [302], an ER = 8 dB implies V ∼0.37V π (refs [133,134]) in push-pull configuration [303], with V π = 2.7 V ·IL =L α loss = FOM PM /V π = 4.4 dB, so that P in = P out,1 +IL = 0.6 dBm.…”

Section: Appendix 2 | Modulators and Detectors For Optical Transceiversmentioning

confidence: 99%

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Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

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Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10 −3 . It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for graphene-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications.Photonics is poised to play an increasingly important role in ICT ( Fig. 1a), since the fixed high capacity links are largely based on photonic technologies. Photonic devices need to support ultra-large bandwidth operation, for example, 200 Tb s−1 in a single fibre[9] and >10 Tb s −1 cm −2 in integrated Si photonics chips [10]. To achieve this, the key components of Si photonics, photodetectors and modulators, need very high performances in terms of speed (≥25 Gb s −1 ), footprint (<1 mm 2 ), insertion loss (<4 dB), manufacturability (>10 6 pieces per year) and power consumption (<1 pJ bit −1 ). To date, these requirements have not been fulfilled in one system [11]. Furthermore, in terms of production volumes, photonics is not yet comparable to microelectronics [12], even if the increase in demand for optical networks would, by 2021, lead to an average global Internet Protocol (IP) traffic of 3.3 ZB (zettabytes), corresponding to an average usage data rate of ~800 Tb s −1 (refs[13,14]). In the context of the IoT[7], other applications, including infrared (IR) sensors, biosensors, environmental sensors, metrology, quantum communications and machine vision, will require even larger production volumes [13,15].The telecom network can be divided into three segments: access, aggregation and core (Fig. 1a). The access network is the interface between subscribers and the immediate service provider. The aggregation network aggregates all the input data streams from tributary access networks, converging towards the higher-level core network. The aggregation network includes local and metropolitan networks, which then converge to regional networks. A local area network (LAN) interconnects computers within a limited area, such as a residence, school, laboratory, university or office building. A metropolitan area network (MAN) interconnects us...

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Section: Graphene Integration On Sinmentioning

confidence: 99%

Section: Appendix 2 | Modulators and Detectors For Optical Transceiversmentioning

confidence: 99%

Section: Appendix 2 | Modulators and Detectors For Optical Transceiversmentioning

confidence: 99%

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Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

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show abstract

“…To quantify the performance of our PAM-4 transmitter against this theoretical prediction, BER measurements are performed on the PAM-4 transmitter and a reference single-segment Mach-Zehnder NRZ monolithic silicon photonic transmitter with 2.8 mm long phase shifters per arm [17]. We first compare the OMA needed to achieve error-free signaling of the PAM-4 and NRZ transmitters at a relatively lower data rate of 12.5 Gbaud.…”

Section: Bit-error Rate Characterizationmentioning

confidence: 99%

Monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

Xiong

Gill

Proesel

et al. 2016

Optica

Self Cite

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Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and more-efficient silicon photonics links. While it is challenging to raise the serial line rate, further scaling of the data rate can be realized by, for example, increasing the number of parallel fibers, increasing the number of wavelengths per fiber, and using multi-level pulse-amplitude modulation (PAM). Among these approaches, PAM has a unique advantage because it does not require extra lasers or a costly overhaul of optical fiber cablings within the existing infrastructure. Here, we demonstrate the first fully monolithically integrated silicon photonic four-level PAM (PAM-4) transmitter operating at 56 Gb/s and demonstrate error-free transmission (bit-error-rate < 10 −12 ) up to 50 Gb/s without forwarderror correction. The superior PAM-4 waveform is enabled by optimization of silicon travelingwave modulators and monolithic integration of the CMOS driver circuits. Our results show that monolithic silicon photonics technology is a promising platform for future ultrahigh data rate optical interconnects.

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“…Great strides in WDM system have been achieved, benefiting from a wide variety of basic elements such as power splitters, wavelength multiplexers/de-multiplexers (MUXs/DEMUXs), switches, modulators and photodetectors. Over the last decade, silicon photonics integrated circuits (PICs) for WDM system have transitioned from research topics in academic organizations to product development in industrial community [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Silicon chip-scale space-division multiplexing: from devices to system

Sun

Zhang

2018

Sci. China Inf. Sci.

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Space-division multiplexing (SDM) technique has attracted increasing attentions recently, because it provides an effective way to increase transmission capacity. With the continuous and exponential increase in data demands, high-density integration of silicon photonic components is of significant interest in terms of link price, performance and power consumption. The multimode/mutlicore devices applied to achieve diverse functionalities are key building blocks to construct a chip-scale SDM system based on a silicon on insulator (SOI) platform. This study reviews the recent progress of multimode/multicore devices, which enable coupling, multiplexing/demultiplexing, transmitting switching, as well as modulation and detection. Based on these devices, a complete on-chip SDM system is constructed and discussed.

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Demonstration of Error-Free 32-Gb/s Operation From Monolithic CMOS Nanophotonic Transmitters

Cited by 27 publications

References 18 publications

Graphene-based integrated photonics for next-generation datacom and telecom

Graphene-based integrated photonics for next-generation datacom and telecom

Monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

Silicon chip-scale space-division multiplexing: from devices to system

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