Demonstration of full-field patterning of 32 nm test chips using EUVL

Vandentop, Gilroy; Chandhok, Manish; Putna, E. Steve; Younkin, Todd R.; Clarke, James Stanier; Carson, Steven L.; Myers, Alan M.; Leeson, Michael L.; Zhang, Guojing; Liang, Ted; Murachi, Tetsunori

doi:10.1117/12.814436

Cited by 9 publications

(5 citation statements)

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“…[1][2][3][4] While the theoretical limitations to the RLS trade-off have been well documented, 5,6 this work has all been done at constant film thicknesses. An additional aspect of the RLS trade-off exists that has not been accounted for in these theoretical treatments: as resolution improves, the thickness of resists must concomitantly decrease to prevent line collapse.…”

Section: Introduction 11 Thin-film Ler Problemmentioning

confidence: 99%

LER Limitations of Resist Thin Films

Cardineau

Early

Fujisawa³

et al. 2012

J. Photopol. Sci. Technol.

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This paper describes fundamental studies of the degradation of LER in EUV resists as a function of film thickness. This research focused on the influence of three variables on this LER film thickness problem:  Substrate interaction (primed silicon vs. organic underlayer)  Changes in optical density (variations in fluorine content)  PAG attachment (bound and unbound)Our experimental approach struck a balance between using resists prepared by commercial resist vendors and using open-source resists with custom-designed polymers to address specific variables listed above. One key feature of this research was our development of a mathematical method for evaluation of the extent of the LER deviation in thin films, called φ LER .Our results showed that the effect of substrate was not significant for two different resists (one commercial and one open source). Additionally, we found that increasing optical density actually made the LER degradation (φ LER ) worse-which was contrary to what was predicted by other researchers. Most significant was our demonstration that PAG attachment plays the most important role in the degradation of LER in thinner resist films; polymer-bound PAGs showed a dramatic 3X improvement in φ LER over a similar blended system.

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Section: Introduction 11 Thin-film Ler Problemmentioning

confidence: 99%

LER Limitations of Resist Thin Films

Cardineau

Early

Fujisawa³

et al. 2012

J. Photopol. Sci. Technol.

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“…We also collaborate with Intel on the area of full field exposure evaluation [4,8]. Figure 5 shows excellent static exposure results down to 26nm hp with conventional illumination condition.…”

Section: Euv1 Tool Statusmentioning

confidence: 96%

Nikon EUVL development progress update

et al. 2010

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Nikon has been developing the full field exposure tool called EUV1 for process development of 32nm hp node and beyond. The unique feature of EUV1 is the capability of variable illumination coherence and off-axis illumination. EUV1 was installed in Selete and used for EUV lithography process development. Nikon also has conducted continuous collaborative works with customers using EUV1. Since the last SPIE Symposium in 2009, many exposure results with EUV1 tools were obtained. They showed excellent resolution capability beyond 24nm L/S with off-axis illumination and stable overlay capability of 10nm (Mean + 3 sigma). Process development exposures of test chip patterns are ongoing. With regard to HVM tool development, imaging capability with high NA projection optics and throughput capability are reviewed.

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“…[2][3] Recent works in EUV photoresist development has highlighted that substrate materials play a critical role in affecting imaging performance and can improve LER, resolution, and process window. [4][5] In this paper, LER evolution along the resist sidewalls of ultra-thin film EUV resists is studied. It was previously reported by Foucher that LER both increases and becomes less isotropic as the resist sidewall approaches the substrate interface.…”

Section: Introductionmentioning

confidence: 99%

Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films

et al. 2010

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Line edge roughness evolutions in EUV resist patterns are investigated. Three dimensional scanning electron microscopy images show the pattern sidewall roughness to be highly anisotropic and the roughness to be propagating from the resistsubstrate interface up the resist pattern sidewall. In ultrathin resist films, (film thickness ca. 100 nm and below) roughness is found to be fully correlated from the resist-substrate interface to the resist-air interface. This behavior is seen regardless of the resist platforms being used.Underlayer stack roughness contributions to the pattern sidewall roughness leading to resist LER were examined and no correlations between the two were found. At the same time, the chemical properties of the underlayer stacks are shown to have strong influences on the resist roughness and process performance. Exact mechanisms behind this are not clearly understood at present.

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Demonstration of full-field patterning of 32 nm test chips using EUVL

Cited by 9 publications

References 0 publications

LER Limitations of Resist Thin Films

LER Limitations of Resist Thin Films

Nikon EUVL development progress update

Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films

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