Demonstration of low voltage and functionally complete logic operations using body-biased complementary and ultra-thin ALN piezoelectric mechanical switches

Abstract

This paper reports, for the first time, on the demonstration of low voltage and functionally complete logic elements (NAND and NOR) implemented by using body-biased complementary and ultra-thin (250 nm thick) Aluminum Nitride (AlN) based piezoelectric mechanical switches. This work presents, firstly, the importance of scaling AlN films for the demonstration of ultra-thin AlN switches and, secondly, the implementation of a new actuation scheme based on body biasing to lower the switch threshold voltage. Four of these ultra-thin switches were connected together to synthesize functionally complete MEMS logic gates (NAND and NOR) with a ± 2V swing and a body-bias voltage < 8 V. ©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. Disciplines Engineering | Mechanical EngineeringThis conference paper is available at ScholarlyCommons: http://repository.upenn.edu/meam_papers/258 DEMONSTRATION OF LOW VOLTAGE AND FUNCTIONALLY COMPLETE LOGIC OPERATIONS USING BODY-BIASED COMPLEMENTARY AND ULTRA-THIN ALN PIEZOELECTRIC MECHANICAL SWITCHESNipun Sinha, Timothy Jones, Zhijun Guo and Gianluca Piazza University of Pennsylvania, USA ABSTRACT This paper reports, for the first time, on the demonstration of low voltage and functionally complete logic elements (NAND and NOR) implemented by using body-biased complementary and ultra-thin (250 nm thick) Aluminum Nitride (AlN) based piezoelectric mechanical switches. This work presents, firstly, the importance of scaling AlN films for the demonstration of ultra-thin AlN switches and, secondly, the implementation of a new actuation scheme based on body biasing to lower the switch threshold voltage. Four of these ultra-thin switches were connected together to synthesize functionally complete MEMS logic gates (NAND and NOR) with a ± 2V swing and a body-bias voltage < 8 V.

Adhesive Force Characterization for MEM Logic Relays With Sub-Micron Contacting Regions

“…M ICRO-ELECTRICAL-MECHANICAL (MEM) relays recently have attracted interest for digital logic applications [1] because they can provide for zero standby power and potentially can operate with lower active power than CMOS transistors [2]- [4]. In order for MEM relays to be a viable option for low-power computing, they must operate with low supply voltage (V DD ).…”

Alumimun nitride piezoelectric NEMS resonators and switches

“…With the intent of maximizing both displacement and speed and minimizing the device area, it is possible to derive some simple guidelines for the development of nanomechanical switches based on piezoelectric actuators. As shown in 59 , the product of frequency, f n , and displacement, δ, in a piezoelectric bimorph actuator is given by:…”

“…Slightly thicker (250 nm) AlN films have been employed for the making of mechanical switches 59 (Fig. 10).…”

Composite Polysilicon-Platinum Lateral Nanoelectromechanical Relays

“…Tungsten switches fabricated via Atomic Layer Deposition (ALD) were operated at biases less than 1V across the contact [8]. AlN switches utilizing piezoelectric actuation have also been recently demonstrated [9]. MEMS structures with metal coating have been demonstrated for various RF, optical and sensing applications.…”

“…Figure9. Hold in contact characteristics of a 23.5µm-long Pt coated polysilicon beam showing reliable pull-in and pull-out after being in contact for more than 8min.…”