Demonstration of Multiple Substrate Reuses for Inverted Metamorphic Solar Cells

Adams, Jessica G. J.; Elarde, V.C.; Hains, Alexander W.; Stender, Christopher L.; Tuminello, F.; Youtsey, C.; Wibowo, Andree; Osowski, M.L.

doi:10.1109/jphotov.2013.2245722

Cited by 40 publications

(16 citation statements)

References 7 publications

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“…In conventional ELO, lifted‐off layers are typically attached to flexible secondary handles using adhesives such as thermal releasing tape, wax, or glue . These adhesives can be bulky, heavy, brittle and subject to degradation while also requiring an additional transfer following the separation of the epitaxy onto an intermediate “handle” .…”

Section: Resultsmentioning

confidence: 99%

“…Unfortunately, the promise of wafer reuse has not been fully realized, since the removal of the sacrificial layer results in residual surface damage, and leaves debris on the parent wafer surface. The most common method for preparing that surface for subsequent growth, therefore, has been by post lift‐off chemo‐mechanical polishing that reduces wafer thickness and ultimately inflicts additional damage, limiting reuse to only a very few growth and cleaning cycles …”

Section: Introductionmentioning

confidence: 99%

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Non‐Destructive Wafer Recycling for Low‐Cost Thin‐Film Flexible Optoelectronics

Lee

Zimmerman

Hughes

et al. 2014

Adv Funct Materials

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Compound semiconductors are the basis for many of the highest performance optical and electronic devices in use today. Their widespread commercial application has, however, been limited due to the high cost of substrates. Device costs can be significantly reduced if the substrate is reused in a simple, totally non‐destructive and rapid process. Here, a method that allows the indefinite reuse and recycling of wafers is demonstrated, employing a combination of epitaxial “protection layers”, plasma cleaning techniques that return the wafers to their original, pristine, and epi‐ready condition following epitaxial layer removal, and adhesive‐free bonding to a secondary plastic substrate. The generality of this process is demonstrated by fabricating high performance GaAs‐based photovoltaic cells, light emitting diodes, and metal‐semiconductor field effect transistors that are transferred without loss of performance onto flexible and lightweight plastic substrates, and then the parent wafer is recycled for subsequent growth of additional device layers. This process potentially leads to a transformational change in device cost, arising from the inevitable consumption of the wafer that accompanies conventional epitaxial liftoff followed by chemo‐mechanical polishing.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Non‐Destructive Wafer Recycling for Low‐Cost Thin‐Film Flexible Optoelectronics

Lee

Zimmerman

Hughes

et al. 2014

Adv Funct Materials

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“…In theory this allows for a total weight reduction of more than 75% 11 . Additional cost reductions are possible since ELO allows for re-use of the expensive growth substrates 12,13 and there is the possibility to grow multiple devices on the same wafer and peeling them off separately one by one 14,15 . However, space is an extreme environment (for example high vacuum, harsh UV irradiation, charged particle radiation, atomic oxygen and thermal cycling 16 ), which provides additional challenges in solar panel design.…”

Section: Introductionmentioning

confidence: 99%

Degradation mechanism(s) of GaAs solar cells with Cu contacts

Leest¹,

Kleijne²,

Bauhuis³

et al. 2016

Phys. Chem. Chem. Phys.

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Substrate-based GaAs solar cells having a dense Au/Cu front contact grid with 45% surface coverage were exposed to accelerated life testing at temperatures between 200 and 300 • C. TEM analysis of the front contacts was used to gain a better understanding of the degradation process. During accelerated life testing at 200 • C only intermixing of the Au and Cu in the front contact occurs, without any significant influence on the J-V curve of the cells, even after 1320h (55 days) of accelerated life testing. At temperatures ≥ 250 • C a recrystallization process occurs in which the metals of the contact and the GaAs front contact layer interact. Once the grainy recrystallized layer starts to approach the window, diffusion via grain boundaries to the window and into the active region of the solar cells occurs, causing a decrease in V oc due to enhanced non-radiative recombination via Cu trap levels introduced in the active region of the solar cell. To be a valid simulation of space conditions the accelerated life testing temperature should be < 250 • C in future experiments, in order to avoid recrystallization of the metals with the GaAs contact layer.

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“…1,2 The strong demands for using III-V CSs as channel materials have led to platforms such as III-V CS on Si in order to realize cost-effective mass production. [3][4][5] Among the many experimental approaches, [6][7][8][9][10] wafer bonding and epitaxial lift-off (ELO) techniques have been preferred for accomplishing III-V CSs on Si. 6,7 Contrary to the direct epitaxial growth of III-V CSs on a lattice mismatched Si substrate, 8,9 a high-quality III-V channel is guaranteed by transferring the III-V CS layer from a lattice-matched III-V donor substrate to the Si, regardless of the lattice constant difference.…”

mentioning

confidence: 99%

Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si

Shim

Kim

et al. 2018

APL Materials

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We demonstrated ultra-thin-body (UTB) junctionless (JL) p-type field-effect transistors (pFETs) on Si using GaAs channels. Wafer bonding and epitaxial lift-off techniques were employed to fabricate the UTB p-GaAs-on-insulator on a Si template. Subsequently, we evaluated the JL FETs having different p-GaAs channel thicknesses considering both maximum depletion width and doping concentration for high performance. Furthermore, by introducing a double-gate operation, we more effectively controlled threshold voltage and attained an even higher ION/IOFF of >106, as well as a low subthreshold swing value of 300 mV/dec.

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Demonstration of Multiple Substrate Reuses for Inverted Metamorphic Solar Cells

Cited by 40 publications

References 7 publications

Non‐Destructive Wafer Recycling for Low‐Cost Thin‐Film Flexible Optoelectronics

Non‐Destructive Wafer Recycling for Low‐Cost Thin‐Film Flexible Optoelectronics

Degradation mechanism(s) of GaAs solar cells with Cu contacts

Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si

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