Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

Schmidt, Mathew C.; Kim, Kwang-Choong; Feezell, Daniel; Cohen, Daniel; Saitô, Makoto; Fujito, Kenji; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji

doi:10.1143/jjap.46.l190

Cited by 218 publications

(122 citation statements)

References 10 publications

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“…[25][26][27] Recent studies have shown significant improvements in high-power performance and lower threshold current densities of semipolar/nonpolar LDs. [28][29][30][31][32] It is also expected to have high modulation bandwidth and high-speed performance for semipolar/nonpolar LDs due to higher differential gain and lower threshold current density as shown in Eq. After the MOCVD growth and p-GaN activation, the sample was first cleaned by aqua regia (1:3 HNO 3 :HCl).…”

Section: High Speed Semipolar Laser Diodes: Devicesmentioning

confidence: 99%

Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

Lee

Shen

Cozzan

et al. 2018

Gallium Nitride Materials and Devices XIII

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We report the high-speed performance of semipolar GaN ridge laser diodes at 410 nm and the dynamic characteristics including differential gain, damping, and the intrinsic maximum bandwidth. To the best of our knowledge, the achieved modulation bandwidth of 6.8 GHz is the highest reported value in the blue-violet spectrum. The calculated differential gain of ~3 x 10 -16 cm 2 , which is a critical factor in high-speed modulation, proved theoretical predictions of higher gain in semipolar GaN laser diodes than the conventional c-plane counterparts. In addition, we demonstrate the first novel white lighting communication system by using our near-ultraviolet (NUV) LDs and pumping red-, green-, and blueemitting phosphors. This system satisfies both purposes of high-speed communication and high-quality white light illumination. A high data rate of 1.5 Gbit/s using on-off keying (OOK) modulation together with a high color rendering index (CRI) of 80 has been measured.

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Section: High Speed Semipolar Laser Diodes: Devicesmentioning

confidence: 99%

Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

Lee

Shen

Cozzan

et al. 2018

Gallium Nitride Materials and Devices XIII

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“…In addition, the availability of low-defect-density bulk GaN substrates sliced from boules with nonpolar and semipolar orientations allowed production of laser diodes at longer wavelengths approaching the Bgreen gap[ during last few years [90]- [100]. Table 2 summarizes the recent development of nitride-based LD emitting in the range of 400-500 nm.…”

Section: Paskova Et Al: Gan Substrates For Iii-nitride Devicesmentioning

confidence: 99%

GaN Substrates for III-Nitride Devices

2010

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| Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization in the wurtzite structures along the well-established [0001] growth direction for nitrides. Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have opened opportunities to overcome both of these obstacles and have led to significant progress in the development of several optoelectronic and high-power devices. In this paper, the recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.

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“…To date, many techniques have previously been proposed for obtaining high-quality nonpolar GaN crystals [10]. Also, LEDs [11] and LDs [12] have been demonstrated using these techniques. Very few of these prior works involved a feasible and efficient process, though.…”

Section: Introductionmentioning

confidence: 99%

Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs polar InGaN/GaN based quantum heterostructures

Sarı¹,

Nizamoğlu²,

Choi³

et al. 2011

Opt. Express

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Abstract:We report on the electric field dependent carrier dynamics and optical absorption in nonpolar a-plane GaN-based quantum heterostructures grown on r-plane sapphire, which are surprisingly observed to be opposite to those polar ones of the same materials system and similar structure grown on c-plane. Confirmed by their time-resolved photoluminescence measurements and numerical analyses, we show that carrier lifetimes increase with increasing external electric field in nonpolar InGaN/GaN heterostructure epitaxy, whereas exactly the opposite occurs for the polar epitaxy. Moreover, we observe blue-shifting absorption spectra with increasing external electric field as a result of reversed quantum confined Stark effect in these polar structures, while we observe red-shifting absorption spectra with increasing external electric field because of standard quantum confined Stark effect in the nonpolar structures. We explain these opposite behaviors of external electric field dependence with the changing overlap of electron and hole wavefunctions in the context of Fermi"s golden rule. ©2011 Optical Society of America References and links1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, "High power InGaN single-quantum-well-structure blue and violet light-emitting diodes," Appl. Phys. Lett. 67(13), 1868-1870 (1995). 2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, "Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes," Appl. Phys. Lett. 69(26), 4056-4058 (1996).

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Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

Cited by 218 publications

References 10 publications

Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

GaN Substrates for III-Nitride Devices

Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs polar InGaN/GaN based quantum heterostructures

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