High power and high efficiency nonpolar m-plane (1100) nitride light emitting diodes (LEDs) have been fabricated on low extended defect bulk m-plane GaN substrates. The LEDs were grown by metal organic chemical vapor deposition (MOCVD) using conditions similar to that of c-plane device growth. The output power and external quantum efficiency (EQE) of the packaged 300 ×300 µm2 was 23.7 mW and 38.9%, respectively, at 20 mA. The peak wavelength was 407 nm and <1 nm redshift was observed with change in drive current from 1–20 mA. The EQE shows a minimal drop off at higher currents.

The first nonpolar m-plane ð1 1 100Þ nitride laser diodes (LDs) have been realized on low extended defect bulk m-plane GaN substrates. The LDs were grown by metal organic chemical vapor deposition (MOCVD) using conditions similar to that of c-plane device growth. Broad area lasers were fabricated and tested under pulsed conditions. Lasing was observed at duty cycles as high as 10%. These laser diodes had threshold current densities (J th ) as low as 7.5 kA/cm 2 . Stimulated emission was observed at 405.5 nm, with a spectral line-width of 1 nm.

Improved nonpolar m ‐plane $\bar 1$ light emitting diodes (LEDs) with a thick InGaN multi‐quantum‐well (MQW) structure have been fabricated on low extended defect bulk m ‐plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence emission from the packaged LEDs was 402 nm, which is in the blue‐violet region. The output power and EQE were 28 mW and 45.4%, respectively, at a pulsed driving current of 20 mA. With increasing current, the output power increased linearly, and fairly flat EQE was observed with increasing drive current. At 200 mA, the power and EQE were 250 mW and 41%, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This article reviews the development of nonpolar and semipolar InGaN/GaN light-emitting diodes (LEDs), emphasizing structures on freestanding bulk GaN. A brief history of LED development on each orientation is provided, followed by a discussion of the most relevant and recent results. The context is related to several current LED issues, such as the realization of high-efficiency white solid-state lighting, potential solutions to the “green gap,” and applications for polarized emitters. The section on nonpolar LEDs highlights high-power violet and blue emitters and considers the effects of indium incorporation and substrate miscut. The section on semipolar GaN reviews the development of LEDs in the violet, blue, green, and yellow regions and highlights the potential of InGaN/GaN LEDs as an alternative technology to AlInGaP for yellow emitters. A brief review of polarization anisotropy also is included for each orientation. Finally, a two source white light system utilizing a nonpolar blue LED and a semipolar yellow LED is presented.

Morphological and microstructural evolution in the two-step growth of nonpolar a -plane GaN on r -plane sapphire Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition J. Appl. Phys.