Demonstration of scaled (⩾0.12 μm2) Pb(Zr,Ti)O3 capacitors on W plugs with Al interconnect

Summerfelt, Scott R.; Moïse, T. S.; Xing, Guoqiang; Colombo, Luigi; Sakoda, Tomoyuki; Gilbert, Stephen R.; Loke, Alvin L. S.; Ma, Shawming; Wills, L. A.; Kavari, R.; Hsu, Todd; Amano, Jun; Johnson, S.T.; Vestcyk, D. J.; Russell, Michael W.; Bilodeau, S.; Buskirk, Peter Van

doi:10.1063/1.1423789

Cited by 40 publications

(11 citation statements)

References 14 publications

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“…2 However, although most research has concentrated on epitaxial films grown on single crystal substrates, 3,4 scaling down the thickness of polycrystalline PZT films is more important from the practical point of view, especially in decreasing the operating voltage of FeRAMs. [5][6][7][8] There have only been a few reports that have discussed successful preparation of PZT films with a relatively large P r value of around 20 C/cm 2 .…”

mentioning

confidence: 97%

Thickness scaling of polycrystalline Pb(Zr,Ti)O3 films downto 35nm prepared by metalorganic chemical vapor depositionhaving good ferroelectric properties

Oikawa

Morioka

Nagai

et al. 2004

Applied Physics Letters

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Preparing Pb ( Zr , Ti ) O 3 films less than 100 nm thick by low-temperature metalorganic chemical vapor deposition Appl. Preparation of Pb(Zr,Ti)O 3 thin films by metalorganic chemical vapor deposition for low voltage ferroelectric memory J. Appl. Phys. 93, 1713 (2003); 10.1063/1.1534380 Ferroelectricity of one-axis-preferred-oriented polycrystalline Pb ( Zr,Ti ) O 3 films prepared by pulsedmetalorganic chemical vapor deposition Comparison of crystal structure and electrical properties of tetragonal and rhombohedral Pb(Zr,Ti)O 3 films prepared at low temperature by pulsed-metalorganic chemical vapor deposition

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mentioning

confidence: 97%

Thickness scaling of polycrystalline Pb(Zr,Ti)O3 films downto 35nm prepared by metalorganic chemical vapor depositionhaving good ferroelectric properties

Oikawa

Morioka

Nagai

et al. 2004

Applied Physics Letters

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“…PbTiO 3 -based perovskites with large switching charges were investigated in terms of their integration into ferroelectric random access memories ͑FeRAMs͒. 9,10 Due to ongoing reductions in the feature size and switching voltage, a conformal deposition of very thin films on 3D capacitor structures was required. 1,2 Thin films of PbTiO x were deposited in a combination of two self-limiting binary processes of ALD-TiO x and PbO.…”

Section: Introductionmentioning

confidence: 99%

Growth of ternary PbTiOx films in a combination of binary oxide atomic layer depositions

Watanabe

Hoffmann‐Eifert

et al. 2007

Journal of Applied Physics

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Ternary PbTiOx films were deposited at 240°C on Pt-covered Si substrates using a combination of liquid injection atomic layer depositions of binary TiOx and PbO films. Ti(OC3H7)2(C11H19O2)2 [Ti(Oi−Pr)2(DPM)2] and Pb(C11H19O2)2 [Pb(DPM)2] dissolved in ethylcyclohexane and H2O were used as source materials. The deposition rates of Pb and Ti were enhanced in the ternary process compared to their binary processes under comparable deposition conditions. The Pb∕Ti ratio of PbTiOx films saturated with an increase in Ti precursor input, while it continued to increase with an increasing Pb precursor input. The self-regulated growth nature of the Pb–O layer in the binary film growth was lost in the mixed PbTiOx process as a result of interaction with the predeposited Ti–O layer. It was confirmed that for the PbTiOx film to grow on Pt substrates, an initial incubation period is required. Both Pb–O and Ti–O layers shared a common incubation period of up to ten sequences. The incubation period was shortened by increasing the input of Pb precursor. It was independent of the input of the Ti precursor and the order of precursor supply. This variable incubation period was considered as a potential key issue for growing stoichiometric and uniform multicomponent films over three-dimensional (3D) structures. The order of precursor supply affected the effective deposition rate after the incubation period. A sequence starting with a Ti precursor injection showed a higher growth rate than a sequence that started with a Pb precursor supply. A PbTiOx film was deposited on a 3D substrate precoated with an Ir layer to demonstrate the uniformity in film thickness and cation composition. Although the present PbTiOx process does not have an ideal wide-process window in the cation composition, the PbTiOx film showed uniform coverage and the distribution of cation composition over the hole structure was within ±10%.

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“…Therefore, MOCVD is recognized as one of the most promising methods of deposition. A large number of studies have been made on the deposition of PZT thin films by MOCVD [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Properties of Metal-PZT-Metal Capacitors by Liquid Delivery Mocvd

Xie

Han

et al. 2008

Integrated Ferroelectrics

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Pb(Zr 1−x ,Ti x )O 3 (PZT) thin films were prepared on 8-inch and 4-inch Pt or Ir-electroded Si wafers by liquid delivery metal-organic chemical vapor deposition (LD-MOCVD) using cocktail sources of Pb, Zr and Ti. The processing conditions were optimized in order to obtain high-performance PZT films. The thickness uniformity of PZT films on 8-inch substrate was about ±3.24%. The deposition rate of Pb (15.8 nm/min) and Ti (17.9 nm/min) deposited on Si substrate were faster than that of Zr (2.5 nm/min). The growth temperature of PZT film was adjusted to 570-630 • C depending on the substrates used. The properties of metal/PZT/metal capacitors were also studied. The PZT films based on Pt substrate showed no good ferroelectric properties. By contrast, the ferroelectric properties of Ir/IrO 2 /PZT/IrO 2 /Ir capacitors were excellent. At an applied voltage of 5 V, the remanent polarization (P r ) and coercive field (E c ) values were about 36 µC/cm 2 and 50 kV/cm, respectively.

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Demonstration of scaled (⩾0.12 μm2) Pb(Zr,Ti)O3 capacitors on W plugs with Al interconnect

Cited by 40 publications

References 14 publications

Thickness scaling of polycrystalline Pb(Zr,Ti)O3 films downto 35nm prepared by metalorganic chemical vapor depositionhaving good ferroelectric properties

Thickness scaling of polycrystalline Pb(Zr,Ti)O3 films downto 35nm prepared by metalorganic chemical vapor depositionhaving good ferroelectric properties

Growth of ternary PbTiOx films in a combination of binary oxide atomic layer depositions

Fabrication and Properties of Metal-PZT-Metal Capacitors by Liquid Delivery Mocvd

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