Thickness scaling of polycrystalline Pb(Zr,Ti)O3 films downto 35nm prepared by metalorganic chemical vapor depositionhaving good ferroelectric properties

Abstract

Preparing Pb ( Zr , Ti ) O 3 films less than 100 nm thick by low-temperature metalorganic chemical vapor deposition Appl. Preparation of Pb(Zr,Ti)O 3 thin films by metalorganic chemical vapor deposition for low voltage ferroelectric memory J. Appl. Phys. 93, 1713 (2003); 10.1063/1.1534380 Ferroelectricity of one-axis-preferred-oriented polycrystalline Pb ( Zr,Ti ) O 3 films prepared by pulsedmetalorganic chemical vapor deposition Comparison of crystal structure and electrical properties of tetragonal and rhombohedral Pb(Zr,Ti)O 3 films prepared at low temperature by pulsed-metalorganic chemical vapor deposition

Squarness Control in Polarization-electric filed Curves in Rhombohedral PZT Films

“…However, this composition has a fundamental problem of the large switching voltage originated to the large coercive field. To reduce the switching voltage for the power consumption, one way is reduce the film thickness because the switching voltage was reduced when the coercive field is not strongly depend on the film thickness [2]. In fact, we demonstrated 1 V saturation for 35 nm thick films using local epitaxial technique, in which each grains epitaxially grown from the bottom electrode layers [3].…”

Optimum Crystal Orientation in Rhombohedral PZT Films for FeRAM Application

“…However, this composition has a fundamental problem of large switching voltage originated to the large coercive field. To reduce the switching voltage for the power consumption, decrease of the film thickness has been investigated because the switching voltage was reduced in case of constant coercive field with film thickness [2]. We demonstrate the 1 V saturation for 35 nm thick films using so called local epitaxial technique [3].…”

Ferroelectric properties of (Bi3.15 Nd 0.85 )Ti 3 O 12 with decreasing film thickness

“…Realization of improved electrical properties at reduced film thickness is of considerable interest, as the thin film and device technologies are driving towards miniaturization, for example for small cell size and low operating polarization voltage of FRAM (at 3 V or 5 V) [14]. Therefore, the main objective of this work is to investigate the texture and ferroelectric behaviors of BNdT with decreasing film thickness.…”