Demonstration of the normally off β -Ga2O3 MOSFET with high threshold voltage and high current density

Abstract

In this work, we demonstrated the enhancement mode (E-mode) β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) structure. This E-mode Ga2O3 MOSFET featured the highest VTH of 9.03 V and the highest maximum current ID of 70.0 mA/mm among the reported lateral normally off β-Ga2O3 MOSFETs. Meanwhile, a breakdown voltage of 834 V, a specific on-resistance RON,sp of 19.3 mΩ·cm2, and a sub-threshold swing SS of 87 mV/dec were achieved simultaneously. In addition, VTH shifted by only 9.9% after applying a gate stress of 25 V for 105 s. These findings provide a promising path for the development of enhancement-mode Ga2O3 power devices by incorporating a charge-storage structure.

A high-breakdown-voltage β-Ga2O3 nanoFET with a beveled field-plate structure

“…The low SS comparable to other β-Ga 2 O 3 devices (87 mV dec −1 ) enables fast switching speed with minimal switching loss, enabling more efficient power device construction. 43…”

Simulation Research on High-Voltage β-Ga2O3 MOSFET Based on Floating Field Plate

“…Representative enhancement-mode β-Ga 2 O 3 MOSFET devices include gate-recessed structure, 38 laminated-ferroelectric charge storage gate (L-FeG) structure, 39 oxygen annealed channel structure 40 and a hybrid floating gate (HFG) structure. 41…”

Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition

“…4(h) compares this work with the state-of-art E-mode β-Ga 2 O 3 FETs on different oriented substrates. [32][33][34][35][36][37][38][39][40][41][42] Even the performance does not reach the leading position, but it is still better than some of the E-mode devices, which is a good start for the research of lateral β-Ga 2 O 3 devices on (001) oriented substrates.…”