2002
DOI: 10.1016/s1386-9477(02)00329-6
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Density and size control of self-assembled InAs quantum dots: preparation of very low-density dots by post-annealing

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Cited by 24 publications
(23 citation statements)
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“…The oxide desorption and (2 Â 4)/(c4 Â 4) transition of the surface reconstruction were checked to occur by reflection high-energy electron diffraction at 59075 and 51075 1C, respectively [14,17]. Following the oxide desorption, the substrate was thermally cleaned and an Si-doped n + -GaAs buffer layer of 200 nm was grown at about 0.15 nm/s.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The oxide desorption and (2 Â 4)/(c4 Â 4) transition of the surface reconstruction were checked to occur by reflection high-energy electron diffraction at 59075 and 51075 1C, respectively [14,17]. Following the oxide desorption, the substrate was thermally cleaned and an Si-doped n + -GaAs buffer layer of 200 nm was grown at about 0.15 nm/s.…”
Section: Methodsmentioning
confidence: 99%
“…To study resonant electron tunneling through a single InAs QD without ambiguities, we fabricated earlier sub-micron size resonant tunneling diodes (m-RTDs) in which at most one InAs QD was embedded in each structure through precise control of MBE growth [14], and measured their current-voltage (I-V) characteristics by conductive-tip AFM at temperatures up to $130 K [15]. However, only weak peaks which were attributed to the resonant tunneling through the QD were observed in the I-V curves.…”
Section: Introductionmentioning
confidence: 99%
“…Samples were formed by molecular beam epitaxy; we grew first a 300 nm-thick GaAs on semi-insulating (100) GaAs and then formed InAs quantum dots of less than 10 6 cm -2 in density by depositing an InAs layer of less than its critical thickness and by the post-growth annealing [4]. These dots were then covered by a 200 nm-thick GaAs layer.…”
Section: Methodsmentioning
confidence: 99%
“…The InAs QDs were formed by setting the growth rate to 0.18 monolayer (ML)/s and the deposition of 1.6 ML at a substrate temperature of 500 °C. Before depositing the 20 nm thick GaAs cap layer, the sample was annealed for 1 minute at 500 °C in order to decrease the density of InAs QDs [7]. The density of QDs was estimated to be 1x10 6 cm -2 by CCD imaging of the photoluminescence (PL) (as described later).…”
Section: Sample Preparation and Measurementsmentioning
confidence: 99%