2011
DOI: 10.1103/physrevb.83.035119
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Density-based mixing parameter for hybrid functionals

Abstract: A very popular ab-initio scheme to calculate electronic properties in solids is the use of hybrid functionals in density functional theory (DFT) that mixes a portion of Fock exchange with DFT functionals. In spite of their success, a major problem still remains, related to the use of one single mixing parameter for all materials. Guided by physical arguments that connect the mixing parameter to the dielectric properties of the solid, and ultimately to its band gap, we propose a method to calculate this paramet… Show more

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Cited by 381 publications
(407 citation statements)
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“…if the same functional is used for both oxides; it can only give correct results if the fraction α of HF exchange used is higher for ZnO than for TiO 2 . That it may be reasonable to use different α values for different oxides can be justified if one considers that, as discussed by Alkauskas et al 36 and Marques et al 37 , mixing with the DFT functional a fraction (α) of HF exchange reflects the fact that the latter is subjected to a screening which is related to the dielectric properties of the material considered. These works indicate that it is quite reasonable to assume α=1/ε ∞ ; the latter authors show in fact that using α values chosen in this way allows obtaining with rather good 8 approximation the band gap E g for a series of different semiconductors.…”
Section: Calculation Methodsmentioning
confidence: 99%
“…if the same functional is used for both oxides; it can only give correct results if the fraction α of HF exchange used is higher for ZnO than for TiO 2 . That it may be reasonable to use different α values for different oxides can be justified if one considers that, as discussed by Alkauskas et al 36 and Marques et al 37 , mixing with the DFT functional a fraction (α) of HF exchange reflects the fact that the latter is subjected to a screening which is related to the dielectric properties of the material considered. These works indicate that it is quite reasonable to assume α=1/ε ∞ ; the latter authors show in fact that using α values chosen in this way allows obtaining with rather good 8 approximation the band gap E g for a series of different semiconductors.…”
Section: Calculation Methodsmentioning
confidence: 99%
“…These errors are due to the fixed fraction of the exact exchange term in the HSE06 functional, which should be increased in the large-gap materials. 18 This finding implies that more sophisticated methods such as GW calculations can be utilized to obtain more precise values of E g . We note that the GW calculations are too expensive to be incorporated into the high-throughput screening.…”
Section: Computation Of Band Gapmentioning
confidence: 99%
“…). This idea has been originally proposed by Alkauskas et al [50] and by Marques et al [62]. The dielectric constant is computed by including the full response of the electronic density to the perturbing external electric field.…”
Section: The Band Gap and Band Alignment Problemmentioning
confidence: 99%