Density of "Amorphous" Ge

Light, T. B.

doi:10.1103/physrevlett.22.999

Cited by 54 publications

(10 citation statements)

References 4 publications

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“…2 The transformation on unloading of Ge-II to a-Ge, which at ambient pressure is close in density to Ge-I, 30 would then account for the elbowing. The pinning mechanism described for the smaller pop-ins is insufficient to account for its magnitude.…”

Section: Discussionmentioning

confidence: 99%

Giant pop-ins and amorphization in germanium during indentation

Oliver

Bradby

Williams

et al. 2007

Journal of Applied Physics

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Thermal stability of metastable silicon phases produced by nanoindentationSudden excursions of unusually large magnitude ͑Ͼ1 m͒, "giant pop-ins," have been observed in the force-displacement curve for high load indentation of crystalline germanium ͑Ge͒. A range of techniques including Raman microspectroscopy, focused ion-beam cross sectioning, and transmission electron microscopy, are applied to study this phenomenon. Amorphous material is observed in residual indents following the giant pop-in. The giant pop-in is shown to be a material removal event, triggered by the development of shallow lateral cracks adjacent to the indent. Enhanced depth recovery, or "elbowing," observed in the force-displacement curve following the giant pop-in is explained in terms of a compliant response of plates of material around the indent detached by lateral cracking. The possible causes of amorphization are discussed, and the implications in light of earlier indentation studies of Ge are considered.

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Section: Discussionmentioning

confidence: 99%

Giant pop-ins and amorphization in germanium during indentation

Oliver

Bradby

Williams

et al. 2007

Journal of Applied Physics

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“…The average mass density of all films is about (4.3 ± 0.2) g/cm 3 . This value is considerably smaller than that of crystalline Ge (5.36 g/cm 3 [13]) but lies well within the large range of reported mass density values of sputtered or evaporated Ge films, i.e., between 3.15 g/cm 3 up to the value of crystalline Ge [13][14][15][16][17][18][19]. There seems to be almost no systematic relation between the mass densities of our Ge films and the process parameters, apart from slightly higher values for the Ge films grown by sputtering with Xe (average density 4.35 g/cm 3 ) than for sputtering with Ar (average density 4.26 g/cm 3 ).…”

Section: Resultsmentioning

confidence: 52%

Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

et al. 2015

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“…NP melting was considered a prerequisite for the shape transformation and thus a NP size threshold, above which the NPs remained solid and spherical, was defined. As noted in the previous sections, molten Ge is of greater density than solid Ge [20,21], yielding a volume contraction upon melting. Schmidt et al suggested the latter induces tensile stress in the molten NP, which is partially relieved when the molten NP/ molten SiO 2 ion track interface moves axially inwards towards the molten NP center.…”

Section: Ge Nanoparticle Modification In Amorphous Siomentioning

confidence: 92%

“…At about 100 ps, molten material in the ion track starts to cool radially inward and undergoes the HDL-to-LDA phase transformation. Given the LDA phase has a lower density [20,21], the material seeks to expand. Expansion inwards by pressing material into the voids is more favorable compared to expansion outwards into the surrounding LDA material (Fig.…”

Section: Ion Track Formation In Amorphous Gementioning

confidence: 99%

Ion–solid interactions at the extremes of electronic energy loss: Examples for amorphous semiconductors and embedded nanostructures

Ridgway

Djurabekova

Nordlund

2015

Current Opinion in Solid State and Materials Science

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A selection of ion-solid interactions in the swift heavy-ion irradiation regime is reviewed. We consider the effects of electronic energy loss at tens of keV/nm on both bulk material and nanostructures embedded in a matrix. Specific examples include ion track formation at low ion fluences in bulk Si and Ge and porous layer formation at high ion fluences in bulk Ge. In addition, the intriguing shape and phase transformations observable at high ion fluences in Ge and metallic nanoparticles embedded in bulk SiO 2 are examined and compared. Experiment, modelling and simulation are combined synergistically as we seek fundamental atomistic insight into these unique yet poorly understood processes operative only at the extremes of electronic energy loss.

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Density of "Amorphous" Ge

Cited by 54 publications

References 4 publications

Giant pop-ins and amorphization in germanium during indentation

Giant pop-ins and amorphization in germanium during indentation

Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

Ion–solid interactions at the extremes of electronic energy loss: Examples for amorphous semiconductors and embedded nanostructures

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