Density of states in the channel material of low temperature polycrystalline silicon thin film transistors

Mourgues, K.; Rahal, Akram; Mohammed-Brahim, T.; Sarret, M.; Kleider, Jean‐Paul; Longeaud, Christophe; Bachrouri, A.; Romano‐Rodríguez, A.

doi:10.1016/s0022-3093(99)00937-0

Cited by 11 publications

(2 citation statements)

References 9 publications

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“…Despite this drawback, the analysis of the MPC data can provide important parameters (Table I) of the above inhomogeneous materials, such as average trap distributions and attempt to escape frequencies, which are in agreement with those obtained by other techniques. [33][34][35] In addition, we have found that the MPC measurements of pentacene films are compatible with the fact that the majority carriers from an effective transport path interact via trapping and thermal release with broad trap distributions. 24 The notion of the effective transport path of the majority carriers deals with either transport in the delocalized states or transport by hopping.…”

Section: Introductionsupporting

confidence: 63%

Density and mobility effects of the majority carriers in organic semiconductors under light excitation

Vagenas

Giannopoulou

Kounavis

2015

Journal of Applied Physics

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This study demonstrates that the effect of light excitation on the density and the mobility of the majority carriers can be explored in organic semiconductors by modulated photocurrent spectroscopy. The spectra of phase and amplitude of the modulated photocurrent of pentacene films indicate a significant increase in the density of the photogenerated mobile holes (majority carriers). This increase is accompanied by a comparatively much smaller increase of the steady state photocurrent response which can be reconciled with a decrease in the mobility (μ) of holes. The decrease of μ is supported from an unusual increase of the Y/μ ratio of the out-of-phase modulated photocurrent (Y) signal to the mobility under light excitation. It is proposed that the mobile holes, which are generated from the dissociation of the light-created excitons more likely near the pentacene-substrate interface by electron trapping, populate grain boundaries charging them and producing a downward band bending. As a result, potential energy barriers are build up which limit the transport of holes interacting through trapping-detrapping with deep partially occupied traps in the charged grain boundaries. On the other hand, the transport of holes interacting through trapping-detrapping with empty traps is found unaffected.

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Section: Introductionsupporting

confidence: 63%

Density and mobility effects of the majority carriers in organic semiconductors under light excitation

Vagenas

Giannopoulou

Kounavis

2015

Journal of Applied Physics

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“…The first observation is the low defect density in the grain boundaries of such organic material. For comparison, the same model gives an order of 10 12 /cm 2 for N T in polycrystalline silicon transistors considering a channel thickness of 30 nm [20].…”

Section: Morphology Of C 60 Active Layer As a Function Of The Annealimentioning

confidence: 99%

Impact of the post-thermal annealing on OFETs using printed contacts, printed organic gate insulator and evaporated C60 active layer

Tao

Mohammed‐Brahim

Lei

et al. 2018

Solid-State Electronics

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Towards fully printed organic electronics, bottom-gate, bottom contacts fullerene based organic FETs (OFETs) are fabricated using inkjet printing drop-on-demand technology for the deposition of gate contact, organic gate insulator and source and drain contacts. The last layer of this structure that is the semiconducting fullerene C 60 film, is deposited by thermal evaporation at ambient temperature. Using physical and electrical analysis, the electrical performances are optimized by studying the effect of the thickness of the C 60 film and of the post-thermal annealing of the OFET. A quantitative relationship between the crystalline structure of the C 60 semiconducting layer (grain size and surface roughness) and the electrical performance of the OFETs is demonstrated. The best performance as determined from the values of the electrical parameters of the OFETs are obtained for 90 nm thick C 60 film and after an annealing of the OFET at 200°C. The answer of present nearly fully printed OFETs to a voltage pulse applied to the gate lead to a switching time of 13 ms, and then to application frequency of some 10Hz. This result opens the way to potential main application in electronic circuits for the treatment of analog signals coming from the human body activities.

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Poly-Si Thin Film and Substrate Materials

Bonnaud¹,

Mohammed‐Brahim²,

Ast³

2004

Thin Film Transistors

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Density of states in the channel material of low temperature polycrystalline silicon thin film transistors

Cited by 11 publications

References 9 publications

Density and mobility effects of the majority carriers in organic semiconductors under light excitation

Density and mobility effects of the majority carriers in organic semiconductors under light excitation

Impact of the post-thermal annealing on OFETs using printed contacts, printed organic gate insulator and evaporated C60 active layer

Poly-Si Thin Film and Substrate Materials

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