Density of states of Dirac–Landau levels in a gapped graphene monolayer under strain gradient

Abstract

We study a gapped graphene monolayer in a combination of uniform magnetic field and straininduced uniform pseudomagnetic field. The presence of two fields completely removes the valley degeneracy. The resulting density of states shows a complicated behaviour that can be tuned by adjusting the strength of the fields. We analyze how these features can be observed in the sublattice, valley and full density of states. The analytical expression for the valley DOS is derived.

Strain-controlled charge and spin current rectifications in spin–orbit coupled graphene nano-ribbon: A new proposition

“…[39][40][41][42][43][44][45][46][47] Furthermore, it is known that, strain engineering in graphene can modify its distances between ions in graphene-lattice sites, electronic structure, create polarized carrier puddles, induce pseudomagnetic fields, 48,49 and alter surface properties, which have been well investigated and summarized in previous studies and reviews. [50][51][52][53] The incredible elastic deformability of graphene, [54][55][56] capable of tolerating nondestructive reversible deformations up to extraordinarily high failure limits ( 25%, 57,58 26:5%, 59 or even 27% 60 ), prompted a series of studies on strain effects on graphene's electronic characteristics, notably bandgap engineering. The employment of a mixture of shear strain and uniaxial tensile deformations has been discovered to be the most convenient method for bandgap opening and tuning.…”

Valley polarization braiding in strained graphene

“…We identify precise conditions for new conducting edges-like states to be valley polarized, with the flexibility of positioning them at chosen locations in the system. A map of local density of states as a function of energy and position reveals a unique braid pattern that serves as a fingerprint to identify valley polarization.Strained graphene has emerged as an important tool to implement valleytronic based devices, and in particular, in protocols for quantum computation [1][2][3][4][5][6][7][8][9][10][11][12]. Recent experimental developments show that substrate engineering can be used to design deformation geometries with specific strain profiles [13][14][15][16][17][18][19][20][21][22][23].…”

“…Strained graphene has emerged as an important tool to implement valleytronic based devices, and in particular, in protocols for quantum computation [1][2][3][4][5][6][7][8][9][10][11][12]. Recent experimental developments show that substrate engineering can be used to design deformation geometries with specific strain profiles [13][14][15][16][17][18][19][20][21][22][23].…”