We review the behavior of the entropy per particle in various two-dimensional electronic systems. The entropy per particle is an important characteristic of any many body system that tells how the entropy of the ensemble of electrons changes if one adds one more electron. Recently, it has been demonstrated how the entropy per particle of a two-dimensional electron gas can be extracted from the recharging current dynamics in a planar capacitor geometry. These experiments pave the way to the systematic studies of entropy in various crystal systems including novel two-dimensional crystals such as gapped graphene, germanene and silicene. Theoretically, the entropy per particle is linked to the temperature derivative of the chemical potential of the electron gas by the Maxwell relation. Using this relation, we calculate the entropy per particle in the vicinity of topological transitions in various two-dimensional electronic systems. We show that the entropy experiences quantized steps at the points of Lifshitz transitions in a two-dimensional electronic gas with a parabolic energy spectrum. In contrast, in doubled-gapped Dirac materials, the entropy per particles demonstrates characteristic spikes once the chemical potential passes through the band edges. The transition from a topological to trivial insulator phase in germanene is manifested by the disappearance of a strong zero-energy resonance in the entropy per particle dependence on the chemical potential. We conclude that studies of the entropy per particle shed light on multiple otherwise hidden peculiarities of the electronic band structure of novel two-dimensional crystals. CONTENTS

We propose a characterization tool for studies of the band structure of new materials promising for the observation of topological phase transitions. We show that a specific resonant feature in the entropy per electron dependence on the chemical potential may be considered as a fingerprint of the transition between topological and trivial insulator phases. The entropy per electron in a honeycomb two-dimensional crystal of germanene subjected to the external electric field is obtained from the first principles calculation of the density of electronic states and the Maxwell relation. We demonstrate that, in agreement with the recent prediction of the analytical model, strong spikes in the entropy per particle dependence on the chemical potential appear at low temperatures. They are observed at the values of the applied bias both below and above the critical value that corresponds to the transition between the topological insulator and trivial insulator phases, whereas the giant resonant feature in the vicinity of the zero chemical potential is strongly suppressed at the topological transition point, in the low temperature limit. In a wide energy range, the van Hove singularities in the electronic density of states manifest themselves as zeros in the entropy per particle dependence on the chemical potential.

We derive a general expression for the entropy per particle as a function of chemical potential, temperature and gap magnitude for the single layer transition metal dichalcogenides. The electronic excitations in these materials can be approximately regarded as two species of the massive or gapped Dirac fermions. Inside the smaller gap there is a region with zero density of states where the dependence of the entropy per particle on the chemical potential exhibits a huge dip-and-peak structure. The edge of the larger gap is accompanied by the discontinuity of the density of states that results in the peak in the dependence of the entropy per particle on the chemical potential. The specificity of the transition metal dichalcogenides makes possible the observation of these features at rather high temperatures order of 100 K. The influence of the uniaxial strain on the entropy per particle is discussed.

The recent experimental study of the far-infrared transmission spectroscopy of monolayer graphene has shown that the Drude peak width increases by more than 10% per 1% of applied mechanical strain, while the Drude weight remains unchanged. We study the influence of the strain on the resonant impurity scattering. We propose a mechanism of augmentation of the scattering rate due to the shift in the position of resonance. Using the Lifshitz model of substitutional impurities, we investigate changes in the Drude peak weight and width as functions of the Fermi energy, impurity concentration and magnitude of the impurity potential.

We study a gapped graphene monolayer in a combination of uniform magnetic field and straininduced uniform pseudomagnetic field. The presence of two fields completely removes the valley degeneracy. The resulting density of states shows a complicated behaviour that can be tuned by adjusting the strength of the fields. We analyze how these features can be observed in the sublattice, valley and full density of states. The analytical expression for the valley DOS is derived.