Departure of Hydrogen from a-Si:H

Ance, C.; Ravindra, Nuggehalli M.

doi:10.1002/pssa.2210770129

Cited by 8 publications

(2 citation statements)

References 17 publications

(6 reference statements)

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“…Calibration of the hydrogen content within the film is accomplished by varying the deposition temperature in successive batches before postprocessing the film to determine the atomic hydrogen fraction. Comparing these values to those reported in literature (Ance and Ravindra, 1983;Bertran et al, 1991;Korevaar et al, 2000) reveals three deposition regions with distinct behavior: (1) below 500 K the hydrogen content decreases linearly with increasing deposition temperature, (2) between 500 K and 575 K atomic hydrogen fraction remains relatively unchanged and (3) above 575 K the hydrogen capacity of the film begins to increase (see Fig. 8).…”

Section: Plasma Composition Film Roughness and Hydrogen Contentsupporting

confidence: 70%

Multiscale modeling and run-to-run control of PECVD of thin film solar cells

et al. 2017

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In this work, we focus on the development of a multiscale modeling and runto-run control framework with the purpose of improving thin film product quality in a batch-to-batch plasma-enhanced chemical vapor deposition (PECVD) manufacturing process. Specifically, at the macroscopic scale, gas-phase reaction and transport phenomena yield deposition rate profiles across the wafer surface which are then provided to the microscopic domain simulator in which the complex microscopic surface interactions that lead to film growth are described using a hybrid kinetic Monte Carlo algorithm. Batch-to-batch variability has prompted the development of an additional simulation layer in which an exponentially weighted moving average (EWMA) control algorithm operates between serial batch deposition sequences to adjust the operating temperature of the PECVD reactor to overcome drift in the electron density of the plasma. Application of the run-torun (R2R) control system developed here is shown to reduce offset in the product thickness from 5% to less than 1% within 10 batches of reactor operation. Finally,

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Section: Plasma Composition Film Roughness and Hydrogen Contentsupporting

confidence: 70%

Multiscale modeling and run-to-run control of PECVD of thin film solar cells

et al. 2017

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“…In an effort to calibrate the hydrogen content with experimentally obtained data, a number of batch PECVD processes are conducted using varying deposition parameters; specifically, the deposition temperature in successive batches is varied which yields thin film layers with different morphologies and degrees of bonded hydrogen. Comparing the recorded values to those reported in literature [33][34][35] reveals three distinct regions of interest: (1) below 500 K the hydrogen content of the a-Si:H thin film decreases linearly with increasing deposition temperature; (2) between 500 and 575 K atomic hydrogen fractions remain relatively constant (∼9%) and (3) above 575 K the hydrogen capacity of the porous film begins to increase (see Figure 19). While the observed atomic hydrogen falls within the accepted experimental range regardless of deposition temperature, the gradual upturn of hydrogen fractions above 575 K contradicts the expected behavior.…”

Section: Steady-state Behaviormentioning

confidence: 72%

Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells

2017

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This work focuses on the development of a multiscale computational fluid dynamics (CFD) simulation framework with application to plasma-enhanced chemical vapor deposition of thin film solar cells. A macroscopic, CFD model is proposed which is capable of accurately reproducing plasma chemistry and transport phenomena within a 2D axisymmetric reactor geometry. Additionally, the complex interactions that take place on the surface of a-Si:H thin films are coupled with the CFD simulation using a novel kinetic Monte Carlo scheme which describes the thin film growth, leading to a multiscale CFD model. Due to the significant computational challenges imposed by this multiscale CFD model, a parallel computation strategy is presented which allows for reduced processing time via the discretization of both the gas-phase mesh and microscopic thin film growth processes. Finally, the multiscale CFD model has been applied to the PECVD process at industrially relevant operating conditions revealing non-uniformities greater than 20% in the growth rate of amorphous silicon films across the radius of the wafer.

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Polarizability Studies of Amorphous Silicon

Ravindra

Morhange

Thomas

et al. 1984

Physica Status Solidi (b)

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An attempt is made to evaluate the polarizability of amorphous silicon. These evaluations are carried out for samples prepared by chemical vapour deposition (CVD) and glow-discharge (GD). Spectroscopic models like that of Wemple-Didomenico and Ance are employed for the purposes of calculation. This study may serve as a bridge between experimental results that follow from Raman or infra-red spectroscopy and those that are obtained from absorptance/reflectance studies.Es wird versucht, die Polarisierbarkeit von amorphem Silizium zu berechnen. Diese Rechnungen werden fur Proben durchgefuhrt, die mittels chemischer Dampfabscheidung (CVD) und Glimmentladung (GD) hergestellt werden. Spektroskopische Modelle, wie das von Wemple-Didomenico und Ance werden fur die Berechnung benutzt. Diese Untersuchung kann als Briicke zwischen experimentellen Ergebnissen, die aus Raman-oder Infrarotspektroskopie und denen, die aus Absorptions/Reflexionsuntersuchungen erhalten werden, dienen.

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Departure of Hydrogen from a-Si:H

Cited by 8 publications

References 17 publications

Multiscale modeling and run-to-run control of PECVD of thin film solar cells

Multiscale modeling and run-to-run control of PECVD of thin film solar cells

Multiscale Computational Fluid Dynamics: Methodology and Application to PECVD of Thin Film Solar Cells

Polarizability Studies of Amorphous Silicon

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