2008
DOI: 10.1016/j.jallcom.2006.11.129
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Dependence of annealing time on structural and morphological properties of Ca(Zr0.05Ti0.95)O3 thin films

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Cited by 5 publications
(4 citation statements)
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“…1b shows a typical SEM image of the CCTO thin film surface. The SEM characterization indicates that the quick annealing used in this work was an efficient way to improve the surface porosity of the CCTO thin films compared to the literature results for other perovskite thin films prepared with PPM [18,19]. In addition, the film shows a homogeneous grain size distribution, with an average width of approximately 50 nm.…”
Section: Resultsmentioning
confidence: 63%
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“…1b shows a typical SEM image of the CCTO thin film surface. The SEM characterization indicates that the quick annealing used in this work was an efficient way to improve the surface porosity of the CCTO thin films compared to the literature results for other perovskite thin films prepared with PPM [18,19]. In addition, the film shows a homogeneous grain size distribution, with an average width of approximately 50 nm.…”
Section: Resultsmentioning
confidence: 63%
“…Then, using an appropriate heating setup, the polymer film can be pyrolyzed to produce crystalline oxide thin films with dense or porous morphologies. The advantages of this sample preparation route are the fine control of the film thickness, through multiple solution depositions, and the grain size and porosity, through the temperature and time of crystallization annealing [19,20].…”
Section: Synthesis Proceduresmentioning
confidence: 99%
“…This may be due to the defects (vacancy, movable ion, leaky grain‐boundary, etc.) that developed in the structure of the bulk material with donor dopant . Two main mechanisms can be considered for substituting Nb for Ti in the BiT lattice.…”
Section: Resultsmentioning
confidence: 99%
“…that developed in the structure of the bulk material with donor dopant. [59][60][61][62][63][64][65][66][67] Two main mechanisms can be considered for substituting Nb for Ti in the BiT lattice. The compensation mechanism for substituting a 5+ ion for a 4+ ion should reduce the oxygen vacancy concentration, leading to formation of Bi 3+ vacancies.…”
Section: Resultsmentioning
confidence: 99%