Dependence of Ba(Zr0.1Ti0.9)O3 films growth on substrate temperature upon radio-frequency plasma enhanced pulsed laser deposition

Electrical properties of Nd-substituted Bi4Ti3O12 thin films fabricated by chemical solution deposition

“…There is almost no sudden change of r and tan s in the frequency range up to 100 kHz. The r decreases gradually with increasing frequency, but the tan s of r for Bi 3.15 Nd 0.85 Ti 3 O 12 films is larger than the value of BZT films[15], so Bi 3.15 Nd 0.85 Ti 3 O 12 films have more promising potential to substitute the BZT films which are attractive lead-free dielectric material for dynamic random access memories[16]. FromFig.…”

Effect of annealing time on morphological characteristics of Ba(Zr,Ti)O3 thin films

“…Infrared analysis was performed by means of Equinox/55 (Bruker) Fourier Transformed Infrared (FT-IR) spectrom- The XRD patterns of the BZT thin films revealed that only the film annealed at 300 • C for 192 h presented crystallographic planes (1 0 0), (1 1 0) and (2 0 0) in agreement with the literature. It is worth notice in Table 1 the different methods used [18][19][20][21] in obtaining these crystallographic planes in Ba(Zr x Ti 1−x )O 3 thin films only at higher annealing temperatures than the one used in this work.…”