2013
DOI: 10.1016/j.nimb.2013.04.072
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Dependence of catalytic properties of indium implanted SiO2 thin films on the film-substrate temperature during indium ion implantation

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Cited by 7 publications
(4 citation statements)
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“…Experiments were performed using a low energy ion beam device [ 38 ]. A source gas was introduced into an ion source, and produced ions in the ion source were extracted by applying 15 kV voltage.…”
Section: Methodsmentioning
confidence: 99%
“…Experiments were performed using a low energy ion beam device [ 38 ]. A source gas was introduced into an ion source, and produced ions in the ion source were extracted by applying 15 kV voltage.…”
Section: Methodsmentioning
confidence: 99%
“…Experiments were performed using a low-energy mass-selected ion beam machine (Ulvac). The schematic drawing of the machine was shown in our previous paper [ 40 ]. The machine is composed of a Freeman-type ion source, a mass selector, and a processing chamber.…”
Section: Methodsmentioning
confidence: 99%
“…Previously, we successfully synthesized a catalyst by exposing silicon dioxide films to an indium ion beam, using a low energy ion beam system [7][8][9]. Subsequently, we attempted to implant indium atoms in powdered materials using the same ion beam system, using pellets produced by compression molding.…”
Section: Introductionmentioning
confidence: 99%