“…It has been shown by Schulze et al, that the nitrogen incorporation of 15R grown on C-face is two times that of 15R grown on Si-face whereas for boron the exact opposite was discovered [4]. Since our crystals are grown on graphite and therefore most grains grow on the C-face, the nitrogen concentration should be much higher than the boron concentration, which in case of 6H-SiC leads to a good DAP-emission [5]. This can be transferred to 15R because the dopant levels and the bandgap of 15R-and 6H-SiC are similar.…”