2007
DOI: 10.4028/www.scientific.net/msf.556-557.335
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Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC

Abstract: The dependence of donor-acceptor pair (DAP) emission properties on impurity concentrations of N and B in 6H-SiC epilayers was investigated. Doped samples were grown by closed sublimation technique, and impurity concentrations were confirmed by secondary ion mass spectrometry (SIMS). Photoluminescence (PL) measurement results indicate that p-type 6H-SiC with NA>ND had extremely low DAP emission efficiency, whereas n-type 6H-SiC with NA<ND showed intense DAP emission. Moreover, n-type 6H-SiC with high N an… Show more

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Cited by 6 publications
(8 citation statements)
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“…This correlation was already shown in Ref. [3]. The grain structure of the source crystal can be seen in Fig.…”
supporting
confidence: 60%
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“…This correlation was already shown in Ref. [3]. The grain structure of the source crystal can be seen in Fig.…”
supporting
confidence: 60%
“…It has been shown by Schulze et al, that the nitrogen incorporation of 15R grown on C-face is two times that of 15R grown on Si-face whereas for boron the exact opposite was discovered [4]. Since our crystals are grown on graphite and therefore most grains grow on the C-face, the nitrogen concentration should be much higher than the boron concentration, which in case of 6H-SiC leads to a good DAP-emission [5]. This can be transferred to 15R because the dopant levels and the bandgap of 15R-and 6H-SiC are similar.…”
Section: Samplementioning
confidence: 83%
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“…The emission of donor-acceptor-pair recombination in SiC is well known [2,3]. Especially nitrogen (N) and boron (B) co-doped n-type 6H-SiC layers with B concentrations exceeding 10 18 cm -3 exhibit a high internal quantum efficiency and emit a broad spectrum with the emission peak at about 580 nm [4,5]. As defects give rise to non-radiative recombination the crystal quality is a limiting factor for the device performance.…”
Section: Introductionmentioning
confidence: 99%
“…Especially nitrogen and boron co-doped 6H-SiC layers with B concentrations of more than 10 18 cm -3 show high internal quantum efficiency with the emission peak at about 580nm. The Fast Sublimation Growth Process (FSGP) is a proven technique to produce thick fluorescent SiC (f-SiC) layers of high crystallinity at high growth rates [3] which may be used for the fabrication of a white light emitting diode (LED) structure [4,5] based on a blue InGaN LED grown on the yellow fluorescing SiC substrate. In this work we have investigated the properties of the polycrystalline SiC source materials grown by the PVT method and the impact of the grain properties (grain size, grain polytype and crystallographic grain orientation) on the growth rate during FSGP.…”
mentioning
confidence: 99%