Photoluminescence Topography of Fluorescent SiC and its Corresponding Source Crystals

Wilhelm, Martin; Kaiser, Michl; Jakubavicius, Valdas; Syväjärvi, Mikael; Ou, Yi; Ou, Haiyan; Wellmann, Peter J.

doi:10.4028/www.scientific.net/msf.740-742.421

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2019

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“…In contrast to a previous study [21], the results do not show any prominent differences between n-and p-type material. This may also be due to unintentional Al-doping and will be investigated in a forthcoming work.…”

Section: Resultscontrasting

confidence: 99%

Deep Electronic Levels in n-Type and p-Type 3C-SiC

Schöler¹,

Lederer²,

Wellmann³

2019

MSF

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In recent times, 3C-SiC is gaining more and more interest in terms of applications for optoelectronics and quantum computing. Cubic SiC exhibits a number of luminescent defects in the near infrared originating from deep electronic levels. Temperature dependent photoluminescence measurements were conducted on n-type and p-type 3C-SiC in order to investigate the formation of dopant related point defects as well as intrinsic point defects and defect complexes. The results indicate a number of VSi, VC and VCCSi related defects which might be suitable candidates for future optoelectronic applications.

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Section: Resultscontrasting

confidence: 99%