Dependence of device behaviours on oxygen vacancies in ZnSnO thin-film transistors

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

“…Despite being in the amorphous phase, it is noted that the ZTO film is not as smooth as expected compared with other reports. 58 The reason may be related to the oxygen environment during the growth process. After being sputtered by the laser excitation, the film atoms tend to collide with the oxygen molecules and partially lose their energy, resulting in an increase in roughness.…”

Efficient piezocatalysis of Bi0.5(Na1−xKx)0.5TiO3 nanoparticles: bridging the phase ratio at MPB composition and piezocatalytic activity

“…The atomically resolved lattice structures of the BNKT nanoparticles were investigated using aberration-corrected scanning transmission electron microscopy (GrandArm 300F2, JEOL). The solid-state 23 Na nuclear magnetic resonance (NMR) spectroscopy measurements were carried out on a Bruker Avance III 700 spectrometer with a 16.4 Tesla superconducting magnet operating at a frequency of 185 MHz for the 23 Na nucleus. The BNKT powders were packed in 4 mm zirconia rotors and spun to 14 kHz at the magic angle.…”

“…The BNKT powders were packed in 4 mm zirconia rotors and spun to 14 kHz at the magic angle. A 2 ms hard pulse was used to acquire 1D 23 Na NMR spectra and the 23 Na NMR peak of sodium chloride (NaCl) was referenced at 0 ppm to measure chemical shis. Triple-quantum pulse sequence with an excitation pulse of 9.0 ms and a conversion pulse of 2.6 ms with a 20 ms z-lter followed by a 21.25 ms selective 90°pulse for detection were applied to record the 2D MQMAS (multiple-quantum magic-angle spinning) NMR spectra.…”

Films Stoichiometry Effects on the Electronic Transport Properties of Solution‐Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications

“…The latter has resulted in the realization of multicomponent binary or ternary metal oxides aiming at the control of cationic species and ultimately the reduction of defect states and hence improved electronic transport properties and stability. To this end, several works have reported on the deposition of and metal‐oxide‐based thin film transistors implementing In 2 O 3 , [ 3–6 ] ZnON, [ 7–10 ] ZnSnO, [ 11–16 ] InZnO, [ 17–24 ] SnGaZnO, [ 25–27 ] InGaO, [ 28–31 ] ZnInSnO, [ 32–35 ] HfInZnO, [ 36–39 ] ZrInZnO, [ 40–42 ] and InGaZnO. [ 1,2,43–50 ] While oxide semiconductor materials have been deposited using well‐established vacuum‐based thin films deposition methods such as pulsed laser deposition (PLD), [ 2,4,51,52 ] atomic layer deposition, [ 53–57 ] chemical vapor deposition, [ 7,58 ] and sputtering, [ 22,23,49,50 ] solution‐based techniques [ 19,47,59 ‐72,74‐ 60 ] have also been employed over a wide range of substrate temperatures and post‐deposition annealing conditions.…”