2010
DOI: 10.1016/j.elstat.2010.06.012
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Dependence of discharge path on breakdown characteristic of tunneling magnetroresistive read heads

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Cited by 6 publications
(3 citation statements)
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“…In general, digital electronic devices that make extensive use of high-speed, low-power integrated circuits are less resistant to electrostatic discharge (ESD). Therefore, an increase in human body potential often causes the destruction of digital electronic devices [ 1 , 2 , 3 , 4 , 5 , 6 ]. An increase in the potential of the human body is often caused by frictional charging, owing to daily motion, such as a walking motion.…”
Section: Introductionmentioning
confidence: 99%
“…In general, digital electronic devices that make extensive use of high-speed, low-power integrated circuits are less resistant to electrostatic discharge (ESD). Therefore, an increase in human body potential often causes the destruction of digital electronic devices [ 1 , 2 , 3 , 4 , 5 , 6 ]. An increase in the potential of the human body is often caused by frictional charging, owing to daily motion, such as a walking motion.…”
Section: Introductionmentioning
confidence: 99%
“…Static electricity is used for electronic equipment in the field of industrial electronics for such devices as laser printers, but static electricity causes equipment malfunction and failure [1][2][3][4][5][6][7][8][9][10]. Such a problem of electrical safety cannot be ignored with the decrease of the operational voltage and breakdown voltage of an electronic device.…”
Section: Introductionmentioning
confidence: 99%
“…A charged human body, a charged human object, and an electrostatic induced voltage generated by the electrostatic induction from the body cause a malfunction and failure of electronic equipment1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 ) . This type of the accident cannot be ignored for microelectronics21, 22, 23, 24, 25, 26, 27, 28, 29 ) .…”
Section: Introductionmentioning
confidence: 99%