Dependence of electron spin g-factor on magnetic field in quantum wells

Ito, Tetsu; Shichi, Wataru; Nishioka, Y.; Ichida, Masao; Gotoh, Hideki; Kamada, H.; Ando, Hiroaki

doi:10.1016/j.jlumin.2007.11.065

Cited by 7 publications

(7 citation statements)

References 9 publications

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“…The conduction electron cyclotron effective mass and Landé g factor in zinc-blende type low-dimensional semiconductor systems differs from the free electron values, due to quantum-confinement, non-parabolicity and spin-orbit coupling interaction effects. As a result there has been a lot of work devoted to understanding the properties of the conduction electron cyclotron effective mass and Landé g factor in semiconductor heterostructures [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Such studies have been focused on semiconductor bulk materials [2][3][4], quantum wells (QWs) [5][6][7][8][9][10][11][12][13], quantum well wires (QWWs) [14,15], quantum dots (QDs) [16][17][18][19], and superlattices [6,20].…”

Section: Introductionmentioning

confidence: 99%

“…As a result there has been a lot of work devoted to understanding the properties of the conduction electron cyclotron effective mass and Landé g factor in semiconductor heterostructures [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Such studies have been focused on semiconductor bulk materials [2][3][4], quantum wells (QWs) [5][6][7][8][9][10][11][12][13], quantum well wires (QWWs) [14,15], quantum dots (QDs) [16][17][18][19], and superlattices [6,20].…”

Section: Introductionmentioning

confidence: 99%

“…Electron effective Landé g factor in a Ga 0.65 Al 0.35 As-GaAs-Ga 0.65 Al 0.35 As-GaAs-Ga 0.65 Al 0.35 As DQW, with L = 500 Å, as function of the barrier length L B , two strengths of the applied magnetic field, and n = 0. Present theoretical results are given as full (B = 1 T) and dotted (B = 20 T) curves, and experimental data, presented as solid triangles, circles, and stars, are from measurements by Le Jeune et al[7], Malinowski et al[8], and Tetsu Ito et al[10], respectively.…”

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confidence: 99%

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Coupling-barrier and non-parabolicity effects on the conduction electron cyclotron effective mass and Landé g_{\parallel } factor in GaAs double quantum wells

Perea

Mejía‐Salazar

Porras‐Montenegro

2011

J. Phys.: Condens. Matter

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We have performed a theoretical study of the effects of the non-parabolicity and coupling barrier in between GaAs quantum wells on the conduction electron cyclotron effective mass and Landé [Formula: see text] factor under the action of a growth-direction applied magnetic field. Numerical calculations are performed within the effective mass approximation and taking into account the non-parabolicity effects for the conduction-band electrons, by means of the Ogg-McCombe effective Hamiltonian. The system consists of two GaAs quantum wells connected by a Ga(1 - x)Al(x)As barrier and surrounded by Ga(1 - y)Al(y)As material. We have found that both the [Formula: see text] factor and the cyclotron effective mass are sensitive to the coupling strength, that is the height and width of the barrier in between the GaAs quantum wells. This behavior is similar for every Landé [Formula: see text] factor and the cyclotron effective mass calculated for different Landau levels. It is noticeable that the splitting between the [Formula: see text] and [Formula: see text] cyclotron effective mass increases with the central barrier width and the growth-direction applied magnetic field. As in a single quantum well, we found that the electron Landé [Formula: see text] factor increases with the growth-direction applied magnetic field, comparing quite well with the experimental reports, and that the magnetic field plays an important role in decoupling the quantum wells of the system. Additionally, we have studied the electron cyclotron effective mass and Landé g factor as functions of the Landau levels, depending on the non-parabolicity. From this result one can infer that their population must be taken into account for a complete study of the band parameters as has been proposed in previous works. The present theoretical results are in very good agreement with previous experimental reports in the limiting geometry of a single quantum well.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Coupling-barrier and non-parabolicity effects on the conduction electron cyclotron effective mass and Landé g_{\parallel } factor in GaAs double quantum wells

Perea

Mejía‐Salazar

Porras‐Montenegro

2011

J. Phys.: Condens. Matter

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“…10) As regards GaAs/Al x Ga 1Àx As quantum wells (QWs), considerable research effort has been devoted to clarifying the relationship between the electron g-factor and structural parameters with a view to controlling the former. [11][12][13][14][15][16] Some theoretical analysis approaches are proposed on the basis of Kane's kÁp theory. 10,[17][18][19][20][21][22] The general features of the theoretical results are; (1) the g-factor is a tensor value and exhibits anisotropy parallel and perpendicular to the well layer, and (2) the g-factor increases from a negative value to a positive value with decreasing well thickness.…”

Section: Introductionmentioning

confidence: 99%

“…9) There have been several reports on the electron g-factor in GaAs/Al x Ga 1Àx As QWs. [11][12][13][14][15][16] However, these reports deal only with the effect of well thickness on the electron g-factor in QWs that consist of GaAs wells and Al x Ga 1Àx As barriers in the range of 0:25 < x < 0:35. In these QW, structures electron wave functions are mostly confined in the GaAs wells.…”

Section: Introductionmentioning

confidence: 99%

Dependence of Electron g-Factor on Barrier Aluminum Content in GaAs/AlGaAs Quantum Wells

Shichi

Ito

Ichida

et al. 2009

jjap

Self Cite

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The effects of quantum confinement on electron g-factor tensor components, g ? and g k , were investigated for a wide variety of GaAs/ Al x Ga 1Àx As quantum well structures, including the weak confinement regime, to determine the mapping of the g-factor components as functions of the aluminum content of an Al x Ga 1Àx As barrier and GaAs well thickness. The g-factor components were determined from the periods of electron spin precession, which were assessed by polarization-and time-resolved photoluminescence measurements under a magnetic field. The measured transverse component g ? was found to depend substantially on the barrier aluminum content, while the longitudinal component g k was insensitive to the aluminum content. In addition to the experiments, the electron g-factor was analyzed theoretically on the basis of the three-band kÁp perturbation theory by using Kiselev's method. Comparison of the experimental and theoretical results demonstrates that the three-band kÁp calculation is sufficient to reproduce the main features of the experimental results including the effects of the barrier aluminum content.

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Size‐dependent photoluminescence blinking statistics of single CdSe/ZnS nanocrystals

Itô

Matsuda

Kanemitsu

2008

Phys. Status Solidi (c)

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We studied the photoluminescence (PL) blinking statistics of single CdSe/ZnS nanocrystals at room temperature. It was found that the on ‐ and off ‐time statistics of PL blinking obey power‐law distributions for various nanocrystal sizes. The electron tunneling model between a nanocrystal and the matrix explains the size‐dependent power‐law exponents that characterize the PL blinking statistics, qualitatively. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Dependence of electron spin g-factor on magnetic field in quantum wells

Cited by 7 publications

References 9 publications

Coupling-barrier and non-parabolicity effects on the conduction electron cyclotron effective mass and Landé g_{\parallel } factor in GaAs double quantum wells

Coupling-barrier and non-parabolicity effects on the conduction electron cyclotron effective mass and Landé g_{\parallel } factor in GaAs double quantum wells

Dependence of Electron g-Factor on Barrier Aluminum Content in GaAs/AlGaAs Quantum Wells

Size‐dependent photoluminescence blinking statistics of single CdSe/ZnS nanocrystals

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