Dependence of film composition and thicknesses on optical and electrical properties of ITO–metal–ITO multilayers

Bender, Marcus; Seelig, W.; Daube, Conner; Frankenberger, H; Ocker, B.; Stollenwerk, Jochen

doi:10.1016/s0040-6090(98)00520-3

Cited by 214 publications

(86 citation statements)

References 7 publications

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“…In recent years, M. Bender and A. Kloppel et al reported several advantages of magnetron-sputtered ITO/metal/ITO (IMI) structures that use interlayer Ag 7) and AgCu 8) to improve the structural and optoelectrical properties of ITO films. In this study, a sandwich structure of ITO/Au/ITO films was deposited on glass substrates by radiofrequency (RF) sputtering of ITO and direct current (DC) sputtering of Au intermediate film.…”

Section: -6)mentioning

confidence: 99%

Effect of Annealing Temperature on the Properties of ITO/Au/ITO Films

Chae¹,

Kim²

2009

Korean. J. Mater. Res.

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(ITO) single-layer and ITO/Au/ITO multilayer films were deposited on glass substrates by reactive magnetron sputtering to compare the properties of the films. They were then annealed in a vacuum of 1 × 10 -2Pa at temperatures ranging from 150 to 450 o C for 20 min to determine the effect of the annealing temperature on the properties of the films. As-deposited 100 nm thick ITO films exhibit a sheet resistance of 130 Ω/□ and optical transmittance of 77% at a wavelength length of 550 nm. By inserting a 5 nm-thick Au layer in ITO/metal/ITO (IMI) films, the sheet resistance was decreased to as low as 20 Ω/□ and the optical transmittance was decreased to as little as 73% at 550 nm. Post-deposition annealing of ITO/Au/ITO films led to considerably lower electrical resistivity and higher optical transparency. In the Xray diffraction pattern, as-deposited ITO films did not show any diffraction peak, whereas as-deposited ITO/ Au/ITO films have Au (222)

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Section: -6)mentioning

confidence: 99%

Effect of Annealing Temperature on the Properties of ITO/Au/ITO Films

Chae¹,

Kim²

2009

Korean. J. Mater. Res.

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“…However, significant efforts have been made for decades to develop new TC materials which can replace ITO and IZO for last two decades. As results of these efforts, metal-doped oxides such as Al-doped ZnO (AZO), 1)-3) Ga-doped ZnO (GZO) 4)-6) and Fdoped tin oxide (FTO) 7)-9) as well as multilayer TC oxides (TCOs) consisting of oxide/metal/oxide such as ZnO/Ag/ZnO, 10) ITO/Ag/ITO, 11) ITO/CuAg/ITO, 12) AZO/Al/ZnO 13) have been developed as substitutes for ITO and IZO. There have been also many reports in quarternery TCOs such as InGaZnO 14) in recent years.…”

Section: Introductionmentioning

confidence: 99%

Influence of the aluminum and indium concentrations on the electrical resistivity and transmittance properties of InAlZnO thin films

Chen

Kim

et al. 2009

J. Ceram. Soc. Japan

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InAlZnO films were deposited on glass substrates by sputtering InZnO (In2O3-10 wt% ZnO) and AlZnO (3 wt% Al2O3-97 wt% ZnO) targets simultaneously at room temperature using a DC and AC magnetron cosputtering system. The concentration of Al in the film was varied by using different DC powers for sputtering the InZnO target with the AC power for sputtering the AlZnO target fixed. It has been found that the total concentration of Al and In in the InAlZnO films tends to be maintained constant below a certain Al doping concentration. It has been found that the electrical resistivity of the InZnO film can be decreased by doping Al the concentration of which is higher than a certain lower limit. The cause of the decrease in the resistivity of InZnO by doping 5.2 mol% Al are discussed. The optical transmittance has been found to be also enhanced in all the wavelength range except the range from 410-490 nm by doping 5.2 mol% Al.

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“…It appears that Ag is a popular metal used in various multilayer structures. However, a disadvantage is that defects originating from Ag layer corrosion were observed [19,20]. Therefore, based on the consideration of thermal stability, Pt is used in this study as the metallic mid-layer.…”

Section: Introductionmentioning

confidence: 99%

Nanoscaled Multilayer Thin Films Based on GZO

Cheng

Ting

2008

JNanoR

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Abstract. Nanoscaled gallium-doped ZnO (GZO) thin films, bi-layer Pt/GZO thin films, and tri-layer GZO/Pt/GZO thin films were prepared and their characteristics were investigated. These films were deposited on glass substrates using either rf or dc magnetron sputter deposition. The deposition time and the target-to-substrate distance were varied to obtain different total film thicknesses and layer thicknesses. Effects of total film and layer thicknesses on the optical properties and the electrical properties were studied. Theoretical calculations were performed to discuss effect of the thickness on the optical transmittance of the GZO film. As-deposited GZO films show high electrical resistivity, which was greatly reduced by 2 to 3 orders of magnitude due to the introduction of a surface layer of Pt film. However, the optical transmittance was also reduced. This was improved by using an addition anti-refractive GZO surface layer on the Pt/GZO. A GZO/Pt/GZO film exhibiting visible light transmittance greater than 75% and electrical resistivity in the order of 10 -4 ohm-cm was obtained.

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Dependence of film composition and thicknesses on optical and electrical properties of ITO–metal–ITO multilayers

Cited by 214 publications

References 7 publications

Effect of Annealing Temperature on the Properties of ITO/Au/ITO Films

Effect of Annealing Temperature on the Properties of ITO/Au/ITO Films

Influence of the aluminum and indium concentrations on the electrical resistivity and transmittance properties of InAlZnO thin films

Nanoscaled Multilayer Thin Films Based on GZO

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