Dependence of implantation-induced damage with photoluminescence intensity in GaN:Er

Study of Ion-Beam-Induced Damage and Luminescence Properties in Terbium-Implanted AlGaN

“…This indicates that the annealing method used in this study is very good for rescuing the specimens from ion-beam-induced damage, compared with the annealing method reported in the literature in which the two surface peaks still exist in Er-implanted GaN at a dose of 3 Â 10 15 Er/cm 2 after annealing at an insufficient temperature (900 C). 20) However, the D B peak of the specimen implanted with 1:5 Â 10 15 Tb/cm 2 still remains at a far higher intensity than that of the specimen implanted with 5 Â 10 14 Tb/cm 2 , although backscattered signal intensity can be decreased over all channeling signals. The difference in backscattered-signal intensity between the specimens implanted with 5 Â 10 14 and 1:5 Â 10 15 Tb/cm 2 indicates that the ion-beam-induced damage abruptly saturates and cannot be fully suppressed, although RTA induces a very good recovery, when the dose exceeds 5 Â 10 14 Tb/cm 2 .…”

“…As is well known, the increase in surface peak intensity with increasing dose indicates amorphization or nano-/polycrystallization of the surface layer, 18,19) and damage can be specified as two damaged regions in the depth direction, which are the shallow surface (D S ) and the region deep into the bulk at the end of the projected range (D B ). [18][19][20] These peaks corresponding to damage depend on implantation conditions such as ion dose, implantation energy, and incidence angle. Also, Lorenz and coworkers reported that when the implantation is performed at 300 -500 C or when an AlN capping layer is used, shallow surface peaks can be suppressed.…”

Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

“…Additional procedures to mitigate the ion implantation effects are therefore important. Previous reports showed that performing the implantation along a major crystallographic direction reduces the lattice damage during the implantation process, as the ions are channeled along the atomic rows, reducing the number of nuclear collisions [14,[18][19][20][21][22][23]]. An additional way to reduce the damage could be to increase the substrate temperature during the ion implantation process, increasing the mobility of point defects, and thus promoting their recombination.…”

Properties of Erbium and Ytterbium Doped Gallium Nitride Layers Fabricated by Magnetron Sputtering

“…To obtain GaN layers doped with erbium and ytterbium ions, two procedures are basically available. The first procedure involves fabricating GaN layers and then doping them by ion implantation [11], [12]. The second way involves doping the GaN layers by erbium and ytterbium ions during the deposition process [13], [14].…”