Dependence of In2Se3 crystal structures grown on GaAs (001) substrates on growth temperature and VI/III ratio

Growth of γ-In2Se3 Thin Films by Electrostatic Spray Pyrolysis Deposition

“…It is reported that the -In 2 Se 3 could be grown at below the transformation temperature from the -phase to the -phase in the non-equilibrium growth like the MBE and the SPD growth method. 1,2,8) Therefore, it is plausible that the crystallization of the -In 2 Se 3 layers began at around 235 C in this study. The crystallization of the -In 2 Se 3 phase from the InSe seems to begin in the small temperature range of 20 C as shown in Fig.…”

“…The -In 2 Se 3 is an attractive material for a top cell of tandem-type solar cells because of its energy gap (E g ) value of 1.9 eV. 1,2) A low-cost growth technique is needed for the fabrication of solar cells. A liquid process such as a spray pyrolysis deposition (SPD) and electrostatic spray pyrolysis deposition (ESPD) techniques is a candidate for the low-cost growth techniques, because the crystal growth can be carried out in a non-vacuum atmosphere.…”

“…The In 2 Se 3 system has usually been grown on GaAs or glass substrates under a vacuum such as an MBE or a thermal annealing after a vacuum evaporation technique. [1][2][3][4][5][6][7] There are few reports about the SPD growth or the ESPD growth of -In 2 Se 3 . 8) In this paper, we report on the growth and the characterization of -In 2 Se 3 films using the ESPD growth technique.…”

“…It is known that larger Se/In ratios are needed for the growth of -In 2 Se 3 than those for the growth of -In 2 Se 3 in the MBE growth. 1,2) The result that only the -In 2 Se 3 phase was grown at the ratio of Se=In ¼ 2:0 and T s ! 235 C as shown in Fig.…”

Element substitution from substrates in Bi2Se3, Bi2Te3and Sb2Te3overlayers deposited by hot wall epitaxy

“…α-In 2 Se 3 is a direct gap semiconductor having a band gap of 1.3-1.45 eV [28][29][30]. The band gap of γ-In 2 Se 3 has been reported to change with preparation conditions and spread over a range of 1.8-2.1 eV [30][31][32][33][34]. These energy ranges make γ-In 2 Se 3 attractive, for instance, for a top cell of tandem-type solar cells [35] and α-In 2 Se 3 suitable for absorbing visible light in photovoltaic applications.…”