Dependence of lateral oxidation rate on thickness of AlAs layer of interest as a current aperture in vertical-cavity surface-emitting laser structures

Koley, Bikash; Dagenais, M.; Jin, R.; Simonis, George J.; Pham, John; McLane, G. F.; Johnson, F.G.; Whaley, R.D.

doi:10.1063/1.368094

Cited by 25 publications

(16 citation statements)

References 17 publications

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“…A few different boundary conditions have been considered in the literature. These include zero oxidant concentration at the AlGaAs-GaAs boundaries [11], thickness-dependent oxidation rate at the oxide-AlGaAs interface [12], and different gas transport constant [9]. Although they all seem to fit the presented experimental data well, there are some drawbacks in these existing models.…”

Section: Introductionmentioning

confidence: 94%

Thermal oxidation of AlgaAs: modeling and process control

Chang-Hasnain

2003

IEEE J. Quantum Electron.

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A simple physical model is developed for the thermal oxidation process of AlGaAs using the continuity equation. The model is based on the principle of oxidant mass conservation. Theoretical calculations are compared with experimental data to a good agreement. The model is then applied to the study of VCSEL batch fabrication. Several control parameters are discussed including AlGaAs layer thickness, aluminum composition, initial mesa size, spacing between two adjacent devices, oxidation time, and oxidation temperature.

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Section: Introductionmentioning

confidence: 94%

Thermal oxidation of AlgaAs: modeling and process control

Chang-Hasnain

2003

IEEE J. Quantum Electron.

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“…10,11 According to the analyses of the processes and phenomena of sacrificial layer etching, we expand the classic Deal-Grove model to analyze the Al 0.8 Ga 0.2 As sacrificial etching process, and compare it with the AlAs oxidation process. As shown in Fig.…”

Section: Theoretical Model Of Etchingmentioning

confidence: 99%

Sacrificial Al0.8Ga0.2As etching for microstructures in integrated optoelectronic devices

Guan

Guo

Liang

et al. 2006

Journal of Applied Physics

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The lateral wet-etching kinetics of an Al0.8Ga0.2As sacrificial layer, a typical configuration for optoelectronic devices, has been investigated in detail. Expanding the one-dimensional Si and AlAs oxidation modes to the Al0.8Ga0.2As sacrificial layer etching process, compact analytical formulas were obtained for the time evolution of the etch front and for the etch rate. Through both experiment and theoretical calculations, the lateral etching process parameters, A, B, and B∕A, have been obtained for the different temperatures and etchant volume ratios. The etch rate is found to remain almost constant for a large range of etch length. However, when the etch temperature increases, a rapid increase in this rate is predicted. Activation energies for the process parameters, EA∼0.1eV and EB∼0.5eV, have also been obtained for the etchant volume ratio of 3:1 and the sacrificial layer thickness is 800nm.

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“…As an example, after the full GaAs-based VCSEL wafer is fused to a p-doped GaP substrate under elevated temperature (600-750 °C in an N2 or H2 ambient) and pressure, the remaining GaAs substrate is thinned to a thickness of 10 im or thinned and completely removed by selective etching, and then mesas are etched through the microcavity active region to define the VCSELs. The mesa etch is followed by the thermal oxidation of AlAs [12][13] to form current apertures and then by deposition of circular n-or p-type top Ohmic contacts. A related transfer technique used to place arrays of VCSELs (and photodetectors) onto foreign substrates is flip-chip bonding [14][15].…”

Section: Prior Artmentioning

confidence: 99%

Fabrication and applications of lift-off vertical-cavity surface-emitting laser (VCSEL) disks

Lott¹

2002

SPIE Proceedings

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Vertical cavity surface emitting lasers (VCSELs) are prepared by standard epitaxial crystal growth techniques on GaAs substrates. The VCSELs include A1GaAs distributed Bragg reflectors (DBRs) and selectively oxidized AlAs or A1GaAs current confinement/optical wave-guiding layers. An additional one-lambda-thick selectively oxidized AlAs layer is placed beneath the VCSEL and used as a sacrificial layer. The entire VCSEL disk, geometrically defined by first etching a mesa down into the GaAs substrate, is separated from the substrate by selectively removing the sacrificial Aloxide layer by wet chemical etching. The lift-off VCSEL disks designed for emission at 980 nanometers have a typical diameter of 10 to 50 micrometers and a typical thickness of 7 to 8 micrometers. In this paper I present the design, fabrication, and potential applications of lift-off VCSEL disks.

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Dependence of lateral oxidation rate on thickness of AlAs layer of interest as a current aperture in vertical-cavity surface-emitting laser structures

Cited by 25 publications

References 17 publications

Thermal oxidation of AlgaAs: modeling and process control

Thermal oxidation of AlgaAs: modeling and process control

Sacrificial Al0.8Ga0.2As etching for microstructures in integrated optoelectronic devices

Fabrication and applications of lift-off vertical-cavity surface-emitting laser (VCSEL) disks

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