Dependence of Oxide Pattern Density Variation on Motor Current Endpoint Detection during Shallow Trench Isolation Chemical Mechanical Planarization

Sorooshian, J.; Philipossian, Ara; Stein, David J.; Timon, Robert P.; Hetherington, Dale L.

doi:10.1143/jjap.44.1219

Cited by 6 publications

(3 citation statements)

References 6 publications

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“…Motor current measurement has been widely used for in situ monitoring of friction force during CMP. Sorooshian et al 5) studied the correlation between oxide pattern density and motor current endpoint detection (EPD) during shallow trench isolation CMP. Kim et al 6) presented that motor current signals were affected by hardware noise depending on the operation of the CMP polisher, such as pad conditioning and carrier oscillation.…”

Section: Introductionmentioning

confidence: 99%

Effect of Process Parameters on Friction Force and Material Removal in Oxide Chemical Mechanical Polishing

Park¹,

Lee²,

Kim³

et al. 2008

jjap

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The relationship between sliding friction and material removal was investigated using a sensor to measure dynamic friction force according to process parameters such as pressure, velocity, conditioning, abrasive concentration, and slurry pH during oxide chemical mechanical polishing (CMP). Friction force and material removal linearly depend on applied load and relative velocity. A high relative velocity also has an effect on the boundary condition between the wafer and the pad, and friction force reduces with increase in relative velocity. Friction force reduces with polishing time during oxide CMP with ex situ conditioning because of the changes in pad roughness parameters such as R a , R p , R pk , and R sk . Thus, the in situ conditioning method increases removal rate and improves nonuniformity. Friction force can be uniformly distributed on the oxide wafer as abrasive concentration increases owing to the reduction in friction force loaded on one abrasive particle, improving the nonuniformity of removal rate. In oxide CMP using alkali-based slurry, the effective formation and mechanical removal of the Si-OH bond layer on the SiO 2 surface also affect the temporal decrease in friction force and result in a higher removal rate, in comparison with the results of a high friction force and a low removal rate in oxide CMP using neutral-based slurry.

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Section: Introductionmentioning

confidence: 99%

Effect of Process Parameters on Friction Force and Material Removal in Oxide Chemical Mechanical Polishing

Park¹,

Lee²,

Kim³

et al. 2008

jjap

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“…[24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39] The most popular of such methods measures the carrier or the platen motor current (CMC or PMC). [40][41][42][43][44][45][46][47][48][49][50][51][52][53][54] During polishings, both wafer and platen rotate at desired velocity setpoints. The pad-slurry-wafer interface undergoes a myriad of 3-body interactions which, due to the frictional forces involved, may facilitate or resist the platen and wafer rotation.…”

mentioning

confidence: 99%

Correlating Shear Force and Coefficient of Friction to Platen Motor Current in Copper, Cobalt, and Shallow Trench Isolation Chemical Mechanical Planarization at Steady-State Conditions

Frank

Headley

Sampurno

et al. 2020

ECS J. Solid State Sci. Technol.

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In a follow up from our earlier work that focused on highlighting the relationship among platen motor current (PMC), shear force (SF), and coefficient of friction (COF) in non-steady-state cases, we examined whether PMC was a reliable indicator that could be used in place of SF and COF data at steady-state conditions. For the 12 cases studied, we examined 60 distinct steady-state steps from their associated Stribeck+ curves. Data averaging, coupled with a trend matching algorithm, showed that for large time spans at steady-state, PMC was a reasonably good indicator of both SF and COF, as 68.5% of the time, PMC and SF trends matched (ranges between 62% to 86%) for all 60 cases. Regarding PMC and COF, we observed trend matching for 68.8% of the time (ranges between 62% and 86%) for all 60 cases. However, correlations between SF and PMC, and also between COF and PMC were found to be very poor (in most cases, non-existent) since at small timescales PMC was not sensitive enough to capture the instantaneous stick-slip occurrences and other important tribological and fluid dynamics phenomena present in CMP.

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“…[29][30][31][32][33][34][35][36][37][38][39] The most popular of such alternate methods is centered around measuring the carrier, or the platen, motor current (CMC, or PMC). [40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55] During CMP, the wafer and the platen co-rotate at desired velocity setpoints. The pad-slurry-wafer interface undergoes a myriad of 3-body interactions which, due to the frictional forces involved, may facilitate or resist platen and wafer rotation.…”

mentioning

confidence: 99%

Correlating Shear Force and Coefficient of Friction to Platen Motor Current in Copper, Cobalt, and Shallow Trench Isolation Chemical Mechanical Planarization at Highly Non-Steady-State Conditions

Frank¹,

Headley²,

Sampurno³

et al. 2019

ECS J. Solid State Sci. Technol.

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In this study we determined the relationships that exist between the coefficient of friction (COF) and platen motor current (PMC), and also between shear force and PMC at highly non-steady-state conditions during chemical mechanical planarization (CMP). For the 12 cases studied (8 for copper, and 4 for dielectric CMP including one as a cobalt buff step), we found that real-time PMC data closely mimicked shear force data as evident from high average values of correlation coefficient and coefficient of determination for all 12 cases (0.913 and 0.835, respectively). As for COF vs. PMC, average correlation coefficient and coefficient of determination for Cases A through D were 0.949 and 0.900, respectively. However, for the remaining 8 cases, correlation coefficients ranged from zero to 0.425, with coefficients of determination ranging from zero to 0.180. The reason behind the strong correlations seen in the first 4 cases, and the lack of any correlation seen in the remaining 8 cases, were explained based on the particulars of the dominant tribological mechanism for each case.

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Dependence of Oxide Pattern Density Variation on Motor Current Endpoint Detection during Shallow Trench Isolation Chemical Mechanical Planarization

Cited by 6 publications

References 6 publications

Effect of Process Parameters on Friction Force and Material Removal in Oxide Chemical Mechanical Polishing

Effect of Process Parameters on Friction Force and Material Removal in Oxide Chemical Mechanical Polishing

Correlating Shear Force and Coefficient of Friction to Platen Motor Current in Copper, Cobalt, and Shallow Trench Isolation Chemical Mechanical Planarization at Steady-State Conditions

Correlating Shear Force and Coefficient of Friction to Platen Motor Current in Copper, Cobalt, and Shallow Trench Isolation Chemical Mechanical Planarization at Highly Non-Steady-State Conditions

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