2008
DOI: 10.1007/s00340-008-3332-8
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Dependence of terahertz radiation on gap sizes of biased multi-energy arsenic-ion-implanted and semi-insulating GaAs antennas

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Cited by 3 publications
(2 citation statements)
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“…The As + -implanted GaAs and O + -implanted GaAs PC antennas have breakdown electric field thresholds of 12.5 kV/cm and 14.1 kV/cm respectively, as compared to 3.3 kV/cm for semi-insulating GaAs PC antenna [24]. Thus, ion-implanted PC antennas benefit from high reachable bias fields and generate higher THz power in comparison with semi-insulating GaAs PC antenna [25]. The difference of the breakdown electric field between O + -implanted GaAs emitters and As + -implanted GaAs emitter should be the result of the compensation induced by oxygen impurity.…”
Section: Pc Antennas Made From Ion-implanted Gaas Materialsmentioning
confidence: 96%
“…The As + -implanted GaAs and O + -implanted GaAs PC antennas have breakdown electric field thresholds of 12.5 kV/cm and 14.1 kV/cm respectively, as compared to 3.3 kV/cm for semi-insulating GaAs PC antenna [24]. Thus, ion-implanted PC antennas benefit from high reachable bias fields and generate higher THz power in comparison with semi-insulating GaAs PC antenna [25]. The difference of the breakdown electric field between O + -implanted GaAs emitters and As + -implanted GaAs emitter should be the result of the compensation induced by oxygen impurity.…”
Section: Pc Antennas Made From Ion-implanted Gaas Materialsmentioning
confidence: 96%
“…In addition, owing to the variety of experimental conditions (e.g. different sources of substrate materials), the experimental results from different group can not be compared fairly and sometimes even conflict with each other [3,4,5,6,7]. Alternatively, numerical simulation is an effective and powerful route, in which the involved parameter can be studied individually and explicitly.…”
Section: Introductionmentioning
confidence: 99%