We compare the performance of THz photoconductive ͑PC͒ emitter antennas fabricated on multienergy arsenic ion implanted GaAs ͑multi-GaAs:As ϩ) and semi-insulating GaAs. High damage threshold biasing ͑Ͼ60 kV/cm͒ and large saturation optical-pumping power ͑ϳ20 mW͒ for multi-GaAs:As ϩ based PC antennas are reported. Carrier mobility in the As ion implanted layer of GaAs:As ϩ was estimated to be about 150 cm 2 /V/s, which was comparable to that of low temperature GaAs.

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