Dependence of the critical thickness on Si doping of InGaAs on GaAs

Abstract

Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr 4

Crosshatch observation in MBE-grown Be-doped InGaAs epilayer on InP

“…Thus, Be-doping is more effective in increasing the critical thickness of In x Ga 1Àx As than Sidoping. According to the explanation of Tanner et al [1,2], those results indicate that the frictional force for Be-doping is larger than that for Sidoping.…”

“…It is seen that dislocations are confined at and within 100 nm above the interface between the In 0.77-Ga 0.23 As bulk-like thin film and the In 0.52 Al 0.48 As buffer layer. On the other hand, the crosshatch patterns were observed on the surfaces of Si-doped ([Si] ¼ 0-5 Â 10 18 cm À3 ) In 0.04 Ga 0.96 As grown on GaAs at the layer thickness of more than 200 nm [1,2]. Thus, Be-doping is more effective in increasing the critical thickness of In x Ga 1Àx As than Sidoping.…”

“…To overcome this difficulty, impurity doping effect was investigated on In 0.04 Ga 0.96 As films grown on GaAs substrate by using Si donor atoms, the result of which shows a limited success that Si doping up to 5 Â 10 18 cm À3 is useful to increase the critical thickness by a factor of two from 100 to 200 nm. This effect was accounted for in terms of the Peierls stress [1,2]. Nevertheless, thicker films are still very difficult to grow.…”

Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE

“…The lattice hardening effect has also been observed in other materials, for example, when GaAs is highly doped by Si [26] and the alloy of AlGaAs [27] or InAlAs [28] with high Al concentrations. This effect was evidenced by hindering the formation and motion of MDs as a result of the enhanced bonding strength leading to an increased critical thickness [25,26].…”

“…This effect was evidenced by hindering the formation and motion of MDs as a result of the enhanced bonding strength leading to an increased critical thickness [25,26]. The same impact could also make it difficult for the TDs to thread through the hard material and forces them to be bent [27].…”