Dependence of the mechanism of current flow in the in-n-GaN alloyed ohmic contact on the majority carrier concentration

Бессолов, В. Н.; Blank, Tanya; Goldberg, Yu. A.; Konstantinov, O. V.; Posse, E. A.

doi:10.1134/s1063782608110134

Cited by 16 publications

(20 citation statements)

References 6 publications

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“…Figure 4 shows the experimental R c (T) dependencies for the In-GaN structures measured in Ref. 3 on the samples with a total dislocation density of about 10 8 cm À2 as well as the results of our calculations of R diff ðTÞ for three electron concentrations, 5 Â 10 16 , 10 18 , and 10 19 cm À3. In Fig.…”

Section: A Gan Casementioning

confidence: 99%

“…The following anomaly was registered: in the temperature range starting from room temperature the contact resistance increases with increasing temperature T. In particular, such temperature dependence of the contact resistance was observed for In-n-GaP and In-n-GaN contacts. [1][2][3] The increase of contact resistance with temperature was also observed for ohmic contacts to p-and n-InP. 4 The authors of Ref.…”

Section: Introductionmentioning

confidence: 99%

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Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Sachenko

Belyaev

Болтовец

et al. 2012

Journal of Applied Physics

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Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors AIP Advances 2, 022113 (2012) All-metallic lateral spin valves using Co2Fe(Ge0.5Ga0.5) Heusler alloy with a large spin signal Appl. Phys. Lett. 100, 052405 (2012) Contact transport of focused ion beam-deposited Pt to Si nanowires: From measurement to understanding Appl. Phys. Lett. 100, 053503 (2012) Ab initio quantum transport simulation of silicide-silicon contacts J. Appl. Phys. 111, 014305 (2012) Impact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions Appl. Phys. Lett. 99, 253504 (2011) Additional information on J. Appl. Phys. A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is proposed. Its specific feature is the appearance of a characteristic region where the contact resistance increases with temperature. According to the mechanism revealed, the current flowing through the metal shunts associated with dislocations is determined by electron diffusion. It is shown that current flows through the semiconductor near-surface regions where electrons accumulate. A feature of the mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as silicon-based materials. A reasonable agreement between theory and experimental results is obtained.

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Section: A Gan Casementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Sachenko

Belyaev

Болтовец

et al. 2012

Journal of Applied Physics

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“…The following anomaly was registered: in the temperature range starting from the room temperature, the contact resistance increases with increasing temperature T. In particular, this temperature dependence of contact resistance was observed for Inn-GaP and In-n-GaN contacts [10,31]. The increase of contact resistance with temperature was also observed for ohmic contacts fabricated to p-and n-InP [32].…”

Section: Introductionmentioning

confidence: 62%

“…At the same time, the results obtained in Refs. [10,31] were explained by assuming that current flow is limited by resistance of metal shunts on dislocations in semiconductor layers with a high dislocation density. Since metal resistance linearly increases with temperature at temperatures exceeding the Debye one, it should be expected appearance of linear behavior of R c (T).…”

Section: Introductionmentioning

confidence: 99%

http://journal-spqeo.org.ua

Sachenko¹,

Конакова²,

Belyaev³

2018

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. This review is devoted to presentation and analysis of physical mechanisms of ohmic contacts formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched for the recent decade are described. Used in this review were the original results of the authors, which they described earlier in various papers of recent years. Current flow through dislocations combined with metal shunts, realized, in particular, on the lapped semiconductor surface; detailed current flow mechanism in the presence of doping step and current flow through the heavily doped semiconductor surface charge states reduction should be noted among the new mechanisms of current flow. These current flow mechanisms are characterized by the presence of specific contact resistance growth with temperature increase in some temperature intervals and contacts ohmicity up to helium temperatures.

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“…In this case, growing as well as decreasing with temperature   T c  curves are possible. As to the ohmic contacts to high-resistance AlN, there is no detailed information on them in literature, except for the paper [15] where AlN In  alloyed contact was considered. It was noted that the above contact was high-resistance, with linear current-voltage characteristic, and its resistance was close to the bulk one.…”

Section: Introductionmentioning

confidence: 99%

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

Sachenko¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Dependence of the mechanism of current flow in the in-n-GaN alloyed ohmic contact on the majority carrier concentration

Cited by 16 publications

References 6 publications

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

http://journal-spqeo.org.ua

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

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