Depletion-All-Around Operation of the SOI Four-Gate Transistor

Akarvardar, K.; Cristoloveanu, S.; Gentil, P.; Schrimpf, R.D.; Blalock, Benjamin J.

doi:10.1109/ted.2006.888749

Cited by 41 publications

(14 citation statements)

References 19 publications

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“…9) and G 4 -FETs. 10 The additional gate can provide enhanced performance and robustness to the device, either inducing more current or suppressing leakage current depending on the operation mode. So far, these multiple-gate technologies have not been implemented in GaN-based HEMT technology to any significant level.…”

Section: Improvement Of Drain Breakdown Voltage With a Back-side Gatementioning

confidence: 99%

Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors

Hwang

Dong

Hsieh

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Section: Improvement Of Drain Breakdown Voltage With a Back-side Gatementioning

confidence: 99%

Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors

Hwang

Dong

Hsieh

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…The EFN biosensor resembles the silicon-on-insulator (SOI) G 4 -FET developed in 2002 [16][17][18] and is presented schematically in Figure 1a. The biosensor is composed of an accumulation-type transistor with four, independent gates: a backgate V Gb , a frontgate/reference electrode (V REF ) and two additional lateral junction gates (V Gj1 and V Gj2 ) located on both sides of the conducting channel.…”

Section: Introductionmentioning

confidence: 99%

Specific and label-free femtomolar biomarker detection with an electrostatically formed nanowire biosensor

et al. 2013

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We report a specific, label-free and real-time detection of femtomolar protein concentrations with a novel type of nanowirebased biosensor. The biosensor is based on an electrostatically formed nanowire, which is conceptually different from a conventional silicon nanowire in its confinement potential, charge carrier distribution, surface states, dopant distribution, moveable channel and geometrical structure. This new biosensor requires standard integrated-circuit processing with relaxed fabrication requirements. The biosensor is composed of an accumulation-type, planar transistor surrounded by four gates, a backgate, front gate and two lateral gates, and it operates in the all-around-depletion mode. Consequently, adjustment of the four gates defines the dimensions and location of the conducting channel. It is shown that lithographically shaped channels of 400 nm in width are reduced to effective widths of 25 nm upon lateral-gate biasing. Device operation is demonstrated for protein-specific binding, and it is found that sensitive detection signals are recorded once the channel width is comparable with the dimensions of the protein. The device performance is discussed and analyzed with the help of three-dimensional electrostatic simulations.

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“…Various publications like [3,4] introduced analytical models for this structure. In [4], a simple model that links the drain-current to the terminal voltages is introduced for only a specific mode in which majority carriers flow in the volume of the silicon film far from the silicon/oxide interfaces.…”

Section: Introductionmentioning

confidence: 99%

G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems

Aghababa

Ebrahimi

Saremi

et al. 2012

IEICE Electron. Express

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G4-FET has attracted attention as an emerging device for the future generations of semiconductor industry. This paper is intended to propose a model representing the characteristics of G4-FET device in order to perform circuit simulations. The modeling approach is established upon the neuro-fuzzy technique whose main strength is that they are universal approximators with the ability to solicit interpretable IF-THEN rules. The accuracy of the proposed model is verified by HSPICE circuit simulations.

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Depletion-All-Around Operation of the SOI Four-Gate Transistor

Cited by 41 publications

References 19 publications

Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors

Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors

Specific and label-free femtomolar biomarker detection with an electrostatically formed nanowire biosensor

G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems

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