In this study, Cu(In,Ga)(Te,S)2 (CIGTS) thin films with [Ga]/([In]+[Ga]) atomic ratios in the ranges of 0.22-0.28 and 0.50-0.67 were fabricated using a two-stage technique. During the first stage of the method, Cu/In/Ga and Cu/In/Ga/Te precursor structures were formed on Mo coated stainless steel (SS) foil substrates. During the second stage, these stacks were reacted using Rapid Thermal Annealing (RTA) with or without presence of S vapors. The SS/Mo/Cu/In/Ga stack reacted under S atmosphere yielded CuInGaS2 with a Ga-In gradient across its thickness. SS/Mo/Cu/In/Ga/Te stack reacted without S yielded CuInGaTe2 compound. When S was present, the same stack yielded only CuInGaS2 compound. When, however, already formed CuInGaTe2 layers were heated in S environment, some elemental Te could be retained in the films. Ga and In grading in various reacted films were evaluated by XRD, SIMS and EDS. CIGTS films showed chalcopyrite phase with (112) preferred orientation and with the increase of Ga content, shifts were observed in the XRD peak positions demonstrating Ga inclusion in the lattice. Gibbs free energy calculations were used to explain the preferred reaction of S with metallic constituents when both S and Te were present for reaction.