1999
DOI: 10.1149/1.1390677
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Deposition and Annealing of Ultrathin Ta[sub 2]O[sub 5] Films on Nitrogen Passivated Si(100)

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Cited by 7 publications
(2 citation statements)
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“…There is noticeable broadening, slightly lower intensity (-5%) and barely visible evidence of a low BE feature, gray area marked with an arrow in spectrum (b), after annealing. This data indicates, as reported in previous work [16], that nitriding Si(100) inhibits reactions involving the formation of SiO and reduction of tantalum oxide during both the Ta205 film deposition and vacuum annealing steps.…”
Section: Resultssupporting
confidence: 89%
“…There is noticeable broadening, slightly lower intensity (-5%) and barely visible evidence of a low BE feature, gray area marked with an arrow in spectrum (b), after annealing. This data indicates, as reported in previous work [16], that nitriding Si(100) inhibits reactions involving the formation of SiO and reduction of tantalum oxide during both the Ta205 film deposition and vacuum annealing steps.…”
Section: Resultssupporting
confidence: 89%
“…2c showing the O 1s spectra centered at 531.4 eV, both coatings mainly consist of Ta 2 O 5 . 47,48 Moreover, from Fig. 2b for the Ir 4f spectra, there is no Ir signal for anode B, while the Ir 4f 7/2 and 4f 5/2 peaks are clearly visible for anode A, which are centered at 61.1 and 63.9 eV, respectively.…”
Section: Resultsmentioning
confidence: 92%