Deposition and characteristics of PbS thin films by an in-situ solution chemical reaction process

Ji, Junna; Ji, Huiming; Wang, Jian; Zheng, Xuerong; Lai, Junyun; Liu, Weiyan; Li, Tongfei; Ma, Yanwei; Li, Haiqin; Zhao, Shen; Jin, Zhengguo

doi:10.1016/j.tsf.2015.07.029

Cited by 11 publications

(1 citation statement)

References 39 publications

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“…Low cost and solution processed colloidal quantum dots (CQDs) have enabled photodetectors that benefit from infrared sensitivity, high light absorption, wavelength tenability . Exhibiting tunable bandgap from 0.5 to 1.7 eV matching PQDs' energy level and high air stability with organic ligands, PbS colloidal quantum dots have a significant absorption capacity for NIR and short‐wavelength light, which PQDs can't be access to. The reported photoconductive detectors based on hybrid PbS QDs/graphene have achieved a responsivity up to 10 7 A W −1 attributed to the photogating effect through capacitive coupling .…”

Section: Comparison In Device Performance Of Cspbbr3/pbs Hybrid Feptsmentioning

confidence: 99%

High Performances for Solution‐Pocessed 0D–0D Heterojunction Phototransistors

Zhang

Song

et al. 2017

Advanced Optical Materials

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All‐inorganic cesium lead halide perovskite nanocrystals have emerged as attractive optoelectronic nanomaterials due to their stabilities and highly efficient photoluminescence. High‐sensitivity photodetection covering a large spectral range from ultraviolet to near‐infrared is dominated by phototransistors. To overcome existing limitations in sensitivity and cost of state‐of‐the‐art systems, new‐style device structures and composite material systems are needed with low‐cost fabrication and high performance. Here, field‐effect phototransistors (FEpTs) based on CsPbBr3–PbS colloidal quantum dot heterostructure dominate to obtain a wide response spectral range and high performance. The large spectral detection spectrum is from 400 to 1500 nm similar to PbS quantum dots' response. It is worth mentioning that the device shows responsivity up to 4.5 × 105 A W−1, which is three orders of magnitude higher than the counterpart of individual material‐based devices. Furthermore, other high performance of hybrid CsPbBr3–PbS FEpTs including a short photoresponse time (less than 10 ms) is ascribed to the assistance of heterojunction on the transfer of photoexcitons. The solution‐based fabrication process and excellent device performance strongly underscore CsPbBr3–PbS quantum dot as a promising material for future photoelectronic applications.

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